| Record 1 of 9 |
| Author(s): Lin, QY (Lin, Qingyu); Miao, W (Miao, Wei); Zhang, WC (Zhang, Wancheng); Fu, QY (Fu, Qiuyu); Wu, NJ (Wu, Nanjian) |
| Title: A 1,000 Frames/s Programmable Vision Chip with Variable Resolution and Row-Pixel-Mixed Parallel Image Processors |
| Source: SENSORS, 9 (8): 5933-5951 AUG 2009 |
| Abstract: A programmable vision chip with variable resolution and row-pixel-mixed parallel image processors is presented. The chip consists of a CMOS sensor array, with row-parallel 6-bit Algorithmic ADCs, row-parallel gray-scale image processors, pixel-parallel SIMD Processing Element (PE) array, and instruction controller. The resolution of the image in the chip is variable: high resolution for a focused area and low resolution for general view. It implements gray-scale and binary mathematical morphology algorithms in series to carry out low-level and mid-level image processing and sends out features of the image for various applications. It can perform image processing at over 1,000 frames/s (fps). A prototype chip with 64 x 64 pixels resolution and 6-bit gray-scale image is fabricated in 0.18 mu m Standard CMOS process. The area size of chip is 1.5 mm x 3.5 mm. Each pixel size is 9.5 mu m x 9.5 mu m and each processing element size is 23 mu m x 29 mu m. The experiment results demonstrate that the chip can perform low-level and mid-level image processing and it can be applied in the real-time vision applications, such as high speed target tracking. |
| ISSN: 1424-8220 |
| DOI: 10.3390/s90805933 |
| Record 2 of 9 |
| Author(s): Geng, MM (Geng, Minming); Jia, LX (Jia, Lianxi); Zhang, L (Zhang, Lei); Yang, L (Yang, Lin); Chen, P (Chen, Ping); Wang, T (Wang, Tong); Liu, YL (Liu, Yuliang) |
| Title: Four-channel reconfigurable optical add-drop multiplexer based on photonic wire waveguide: erratum |
| Source: OPTICS EXPRESS, 17 (20): 18209-18210 SEP 28 2009 |
| Abstract: An erratum is presented to correct the calculation of the filtering bandwidth of the micro-ring resonator. (C) 2009 Optical Society of America |
| ISSN: 1094-4087 |
| Record 3 of 9 |
| Author(s): Huang, XH (Huang, Xiaohui); Wang, H (Wang, Huaibing); Yin, S (Yin, Song); Chen, XR (Chen, Xiaorong); Chen, W (Chen, Wei); Yang, H (Yang, Hui) |
| Title: Sterilization system for air purifier by combining ultraviolet light emitting diodes with TiO2 |
| Source: JOURNAL OF CHEMICAL TECHNOLOGY AND BIOTECHNOLOGY, 84 (10): 1437-1440 OCT 2009 |
Abstract: BACKGROUND: Ultraviolet light emitting diodes (UV LEDs) were used as a light source in TiO2 photocatalysis because of their many advantages, such as, long life, safety, low pollution, etc. In this experiment, a light source panel was successfully fabricated with UV LEDs, the light intensities of which were relatively uniform.
RESULTS: The sterilization process comprised two steps. First, an aerosol was blocked by high efficient particulate air (HEPA) filter paper coated with TiO2 photocatalyst. Second, Staphylococcus aureus in the aerosol decreased gradually in the photocatalysis process of UV LED/TiO2. After 52 h irradiation all the S. aureus were killed.
CONCLUSION: The UV LED light source panel had a larger surface for irradiation than a mercury lamp. Thus, its sterilization efficiency was much better than that of traditional methods. The feasibility of UV LED/TiO2 for photocatalysis was proved. (C) 2009 Society of Chemical Industry |
| ISSN: 0268-2575 |
| DOI: 10.1002/jctb.2180 |
| Record 4 of 9 |
| Author(s): Zhang, YX (Zhang Yun-Xiao); Liao, ZY (Liao Zai-Yi); Pan, JQ (Pan Jiao-Qing); Zhou, F (Zhou Fan); Zhu, HL (Zhu Hong-Liang); Zhao, LJ (Zhao Ling-Juan); Wang, W (Wang Wei) |
| Title: InP Based PD/EAM Integrated Photonic Switch |
| Source: CHINESE PHYSICS LETTERS, 26 (10): Art. No. 104208 OCT 2009 |
| Abstract: A new compact three-port InP based PD/EAM (photo-detector/electro-absorption modulator) integrated photonic switch is reported. The device demonstrates bi-directional wavelength conversion over 20 nm at 2.5 Gbit/s with a low input optical power of about 20 mW. |
| ISSN: 0256-307X |
| Article Number: 104208 |
| Record 5 of 9 |
| Author(s): Wang, H (Wang Hui); Zhu, JH (Zhu Ji-Hong); Jiang, DS (Jiang De-Sheng); Zhu, JJ (Zhu Jian-Jun); Zhao, DG (Zhao De-Gang); Liu, ZS (Liu Zong-Shun); Zhang, SM (Zhang Shu-Ming); Yang, H (Yang Hui) |
| Title: InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer |
| Source: CHINESE PHYSICS LETTERS, 26 (10): Art. No. 107302 OCT 2009 |
| Abstract: Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD). The effect of the annealing temperature on the p-type behavior of Mg-doped InGaN is studied. It is found that the hole concentration in p-InGaN increases with a rising annealing temperature in the range of 600 850 C, while the hole mobility remains nearly unchanged until the annealing temperature increases up to 750 C, after which it decreases. On the basis of conductive p-type InGaN growth, the p-In0.1Ga0.9N/i-In0.1Ga0.9N/n-GaN junction structure is grown and fabricated into photodiodes. The spectral responsivity of the InGaN/GaN p-i-n photodiodes shows that the peak responsivity at zero bias is in the wavelength range 350-400 nm. |
| ISSN: 0256-307X |
| Article Number: 107302 |
| Record 6 of 9 |
| Author(s): Wang, HL (Wang Hai-Li); Xiong, YH (Xiong Yong-Hua); Huang, SS (Huang She-Song); Ni, HQ (Ni Hai-Qiao); He, ZH (He Zhen-Hong); Dou, XM (Dou Xiu-Ming); Niu, ZC (Niu Zhi-Chuan) |
| Title: Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots |
| Source: CHINESE PHYSICS LETTERS, 26 (10): Art. No. 107801 OCT 2009 |
| Abstract: We obtain low-density charged InAs quantum dots with an emission wavelength below 1 mu m using a low InAs growth rate. The quantum dots have a bimodal size distribution with an emission wavelength of around 1340 nm and 1000 nm, respectively. We observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77 K. |
| ISSN: 0256-307X |
| Article Number: 107801 |
| Record 7 of 9 |
| Author(s): Ma, SS (Ma Shan-Shan); Wang, BR (Wang Bao-Rui); Sun, BQ (Sun Bao-Quan); Wu, DH (Wu Dong-Hai); Ni, HQ (Ni Hai-Qiao); Niu, ZC (Niu Zhi-Chuan) |
| Title: Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells |
| Source: CHINESE PHYSICS LETTERS, 26 (10): Art. No. 107803 OCT 2009 |
| Abstract: We investigate the temperature dependence of photoluminescence (PL) and time-resolved PL on the metamorphic InGaAs quantum wells (QWs) with an emission wavelength of 1.55 mu m at room temperature. Time-resolved PL measurements reveal that the optical properties can be partly improved by introducing antimony (Sb) as a surfactant during the sample growth. The temperature dependence of the radiative lifetime is measured, showing that for QWs grown with Sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60 K, while the nonradiative process becomes activated with further increases in temperature. However, without Sb assistance, the nonradiative centers are activated when the temperature is higher than 20 K. |
| ISSN: 0256-307X |
| Article Number: 107803 |
| Record 8 of 9 |
| Author(s): Wu, YX (Wu Yu-Xin); Zhu, JJ (Zhu Jian-Jun); Zhao, DG (Zhao De-Gang); Liu, ZS (Liu Zong-Shun); Jiang, DS (Jiang De-Sheng); Zhang, SM (Zhang Shu-Ming); Wang, YT (Wang Yu-Tian); Wang, H (Wang Hui); Chen, GF (Chen Gui-Feng); Yang, H (Yang Hui) |
| Title: The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates |
| Source: CHINESE PHYSICS B, 18 (10): 4413-4417 OCT 2009 |
| Abstract: High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural proper-ties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated. |
| ISSN: 1674-1056 |
| Record 9 of 9 |
| Author(s): Fang, C (Fang Cheng); Wang, ZG (Wang Zhi-Gang); Li, SS (Li Shu-Shen); Zhang, P (Zhang Ping) |
| Title: Magnetization of two-dimensional heavy holes with boundaries in a perpendicular magnetic field |
| Source: CHINESE PHYSICS B, 18 (10): 4430-4436 OCT 2009 |
| Abstract: The magnetisation of heavy holes in III-V semiconductor quantum wells with Rashba spin-orbit coupling (SOC) in an external perpendicular magnetic field is studied theoretically. We concentrate on the effects on the magnetisation induced by the system boundary, the Rashba SOC and the temperature. It is found that the sawtooth-like de Haas-van Alphen (dHvA) oscillations of the magnetisation will change dramatically in the presence of such three factors. Especially, the effects of the edge states and Rashba SOC on the magnetisation are more evident when the magnetic field is smaller. The oscillation center will shift when the boundary effect is considered and the Rashba SOC will bring beating patterns to the dHvA oscillations. These effects on the dHvA oscillations are preferably observed at low temperatures. With increasing temperature, the dHvA oscillations turn to be blurred and eventually disappear. |
| ISSN: 1674-1056 |
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