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[2010-06-05]

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Record 1 of 20
Author(s): Li, YC (Li, Yan-Chao)
Title: DTADH and quantum critical phenomena caused by anisotropy and external magnetic field for spin-1/2 Heisenberg diamond chains
Source: PHYSICS LETTERS A, 374 (22): 2274-2280 MAY 3 2010
Abstract: Using the transfer matrix renormalization group (TMRG) method, we study the connection between the first derivative of the thermal average of driving-term Hamiltonian (DTADH) and the trace of quantum critical behaviors at finite temperatures. Connecting with the exact diagonalization method, we give the phase diagrams and analyze the properties of each phase for both the ferromagnetic and anti-ferromagnetic frustrated J(3) anisotropy diamond chain models. The finite-temperature scaling behaviors near the critical regions are also investigated. Further, we show the critical behaviors driven by external magnetic field, analyze the formation of the 1/3 magnetic plateau and the influence of different interactions on those critical points for both the ferrimagnetic and anti-ferromagnetic distorted diamond chains. (C) 2010 Elsevier B.V. All rights reserved.
ISSN: 0375-9601
DOI: 10.1016/j.physleta.2010.02.062


Record 2 of 20
Author(s): Chen, C (Chen, Chen); Lu, JA (Lu, Jun-an); Wu, XQ (Wu, Xiaoqun)
Title: Complex networks constructed from irrational number sequences
Source: PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 389 (13): 2654-2662 JUL 1 2010
Abstract: In this paper, we construct (d, r) networks from sequences of different irrational numbers. In detail, segment an irrational number sequence of length M into groups of d digits which represent the nodes while two consecutive groups overlap by r digits (r = 0,1,...,d-1), and the undirected edges indicate the adjacency between two consecutive groups. (3, r) and (4, r) networks are respectively constructed from 14 different irrational numbers and their topological properties are examined. By observation, we find that network topologies change with different values of d, r and even sequence length M instead of the types of irrational numbers, although they share some similar features with traditional random graphs. We make a further investigation to explain these interesting phenomena and propose the identical-degree random graph model. The results presented in this paper provide some insight into distributions of irrational number digits that may help better understanding of the nature of irrational numbers. (C) 2010 Elsevier By. All rights reserved.
ISSN: 0378-4371
DOI: 10.1016/j.physa.2010.02.033


Record 3 of 20
Author(s): Zhang, L (Zhang, Lei); Ji, RQ (Ji, Ruiqiang); Jia, LX (Jia, Lianxi); Yang, L (Yang, Lin); Zhou, P (Zhou, Ping); Tian, YH (Tian, Yonghui); Chen, P (Chen, Ping); Lu, YY (Lu, Yangyang); Jiang, ZY (Jiang, Zhenyu); Liu, YL (Liu, Yuliang); Fang, Q (Fang, Qing); Yu, MB (Yu, Mingbin)
Title: Demonstration of directed XOR/XNOR logic gates using two cascaded microring resonators
Source: OPTICS LETTERS, 35 (10): 1620-1622 MAY 15 2010
Abstract: We have designed and fabricated a directed logic architecture consisting of two silicon microring resonators that can perform XOR and XNOR operations. The microring resonators are modulated through thermo-optic effect. Two electrical modulating signals applied to the microring resonators represent the two operands of the logical operation. The logical function is evaluated through the directed propagation of light in the device, and the result is represented by the output optical signal. Both XOR and XNOR operations at 20 kbit/s are demonstrated. (C) 2010 Optical Society of America
ISSN: 0146-9592


Record 4 of 20
Author(s): Li, W (Li, Wei); Zhu, NH (Zhu, Ning Hua); Wang, LX (Wang, Li Xian); Ke, JH (Ke, Jian Hong); Chen, SF (Chen, Shuo Fu); Zhang, BH (Zhang, Bang Hong); Xie, L (Xie, Liang)
Title: Optical spectral relation between the master and the frequency-locked slave lasers
Source: OPTICS COMMUNICATIONS, 283 (11): 2324-2327 JUN 1 2010
Abstract: In this paper, the spectral relation between the master and the frequency-locked slave laser (FLSL) is investigated by the conventional technique of optical intensity modulation and optical heterodyne. Experimentally, we demonstrate that under complete and stable locking condition, the lightwave of the FLSL and the sidebands of the master laser produced by the optical intensity modulation are perfectly coherent (frequency coherence). Referring to our recent studies, the lightwave of the master laser and its corresponding sidebands are also perfectly coherent. Additionally, the spectral structures of two perfectly coherent lightwaves are identical in the level of wave train. Therefore, we indirectly verify that the spectral structures of the FLSL and the master laser are identical in the level of wave train. (C) 2010 Elsevier B.V. All rights reserved.
ISSN: 0030-4018
DOI: 10.1016/j.optcom.2010.01.062


Record 5 of 20
Author(s): Jia, L (Jia, Lianxi); Geng, MM (Geng, Minming); Zhang, L (Zhang, Lei); Yang, L (Yang, Lin); Chen, P (Chen, Ping); Liu, YL (Liu, Yuliang)
Title: Dispersion characteristics of nanometer-scaled silicon rib waveguides
Source: CHINESE OPTICS LETTERS, 8 (5): 485-489 MAY 10 2010
Abstract: We investigate the dispersion properties of nanometer-scaled silicon waveguides with channel and rib cross section around the optical fiber communication wavelength and systematically study their relationship with the key structural parameters of the waveguide. The simulation results show that the introduction of an extra degree of freedom in the rib depth enables the rib waveguide more flexible in engineering the group velocity dispersion (GVD) compared with the channel waveguide. Besides, we get the structural parameters of the waveguides that can realize zero-GVD at 1550 nm.
ISSN: 1671-7694
DOI: 10.3788/COL20100805.0485


Record 6 of 20
Author(s): Yang, YD (Yang, Yuede); Wang, SJ (Wang, Shijiang); Huang, YZ (Huang, Yongzhen)
Title: Investigation of mode radiation loss for microdisk resonators with pedestals by FDTD technique
Source: CHINESE OPTICS LETTERS, 8 (5): 502-504 MAY 10 2010
Abstract: Mode radiation loss for microdisk resonators with pedestals is investigated by three-dimensional (3D) finite-difference time-domain (FDTD) technique. For the microdisk with a radius of 1 mu m, a thickness of 0.2 mu m, and a refractive index of 3.4, on a pedestal with a refractive index of 3.17, the mode quality (Q) factor of the whispering-gallery mode (WGM) quasi-TE7,1 first increases with the increase of the radius of the pedestal, and then quickly decreases as the radius is larger than 0.75 mu m. The mode radiation loss is mainly the vertical radiation loss induced by the mode coupling between the WGM and vertical radiation mode in the pedestal, instead of the scattering loss around the perimeter of the round pedestal. The WG M can keep the high Q factor when the mode coupling is forbidden.
ISSN: 1671-7694
DOI: 10.3788/COL20100805.0502


Record 7 of 20
Author(s): Xiong, KL (Xiong, Kanglin); Lu, SL (Lu, Shulong); Jiang, DS (Jiang, Desheng); Dong, JR (Dong, Jianrong); Yang, H (Yang, Hui)
Title: Effective recombination velocity of textured surfaces
Source: APPLIED PHYSICS LETTERS, 96 (19): Art. No. 193107 MAY 10 2010
Abstract: Surface texturization is an effective way to enhance the absorption of light for optoelectronic devices but it also aggravates the surface recombination by enlarging the surface area. In order to evaluate the influence of texture structures on the surface recombination, an effective surface recombination velocity is defined which is assumed to have an equivalent recombination effect on a flat surface. Based on numerical and analytical calculation, the dependences of effective surface recombination on the pattern geometry, the surface recombination velocity, and the diffusion length are analyzed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3396078]
ISSN: 0003-6951
Article Number: 193107
DOI: 10.1063/1.3396078


Record 8 of 20
Author(s): Jia, CH (Jia, C. H.); Chen, YH (Chen, Y. H.); Zhou, XL (Zhou, X. L.); Yang, AL (Yang, A. L.); Zheng, GL (Zheng, G. L.); Liu, XL (Liu, X. L.); Yang, SY (Yang, S. Y.); Wang, ZG (Wang, Z. G.)
Title: Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy
Source: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 99 (2): 511-514 Sp. Iss. SI MAY 2010
Abstract: X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 heterojunction grown by metal-organic chemical vapor deposition. The valence band offset (VBO) is determined to be 0.48 +/- 0.09 eV, and the conduction band offset (CBO) is deduced to be about 0.75 eV using the band gap of 3.1 eV for bulk BaTiO3. It indicates that a type-II band alignment forms at the interface, in which the valence and conduction bands of ZnO are concomitantly higher than those of BaTiO3. The accurate determination of VBO and CBO is important for use of semiconductor/ferroelectric heterojunction multifunctional devices.
ISSN: 0947-8396
DOI: 10.1007/s00339-010-5599-y


Record 9 of 20
Author(s): Zheng, WH (Zheng, Wanhua); Xing, MX (Xing, Mingxin); Chen, W (Chen, Wei); Zhou, WJ (Zhou, Wenjun); Liu, AJ (Liu, Anjin); Wang, HL (Wang, Hailing); Chen, LH (Chen, Lianghui)
Book Group Author(s): IEEE
Title: Demonstration of high efficient tunable lasing with one photonic crystal W1 waveguide
Source: 2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2: 83-84 2009
Conference Title: 8th Pacific Rim Conference on Lasers and Electro-Optics
Conference Date: AUG 30-SEP 03, 2009
Conference Location: Shanghai, PEOPLES R CHINA
Abstract: High efficient tunable edge emitting microlaser was realized with W1 photonic crystal waveguide. Light from micocavity transferred into waveguide directly by mode transforming A tunable range of 57 nm was obtained experimentally
ISBN: 978-1-4244-3829-7


Record 10 of 20
Author(s): Ji, HM (Ji, H. M.); Cao, YL (Cao, Y. L.); Xu, PF (Xu, P. F.); Gu, YX (Gu, Y. X.); Ma, WQ (Ma, W. Q.); Liu, Y (Liu, Y.); Wang, X (Wang, X.); Xie, L (Xie, L.); Yang, T (Yang, T.)
Book Group Author(s): IEEE
Title: Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers
Source: 2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2: 239-240 2009
Conference Title: 8th Pacific Rim Conference on Lasers and Electro-Optics
Conference Date: AUG 30-SEP 03, 2009
Conference Location: Shanghai, PEOPLES R CHINA
Abstract: Large-signal performance of five-stack 1 3 mu m InAs/GaAs quantum-dot (QD) lasers has been investigated Open eye pattern up to 10 Gb/s under direct modulation is demonstrated at 15 degrees C.
ISBN: 978-1-4244-3829-7


Record 11 of 20
Author(s): Huang, YZ (Huang, Yong-Zhen); Yang, YD (Yang, Yue-De); Wang, SJ (Wang, Shi-Jiang); Xiao, JL (Xiao, Jin-Long); Du, Y (Du, Yun)
Book Group Author(s): IEEE
Title: InGaAsP/InP Bistability Triangle Microlasers
Source: 2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2: 448-449 2009
Conference Title: 8th Pacific Rim Conference on Lasers and Electro-Optics
Conference Date: AUG 30-SEP 03, 2009
Conference Location: Shanghai, PEOPLES R CHINA
Abstract: Optical bistability in equilateral- triangle-resonator (ETR) microlasers are analyzed based on two mode rate equations with asymmetrical cross gain saturation Optical bistability is observed in the fabricated InP/GaInAsP ETR microlasers at low temperature
ISBN: 978-1-4244-3829-7


Record 12 of 20
Author(s): Li, YT (Li, Yuntao); Xiao, X (Xiao, Xi); Huang, QZ (Huang, Qingzhong); Li, ZY (Li, Zhiyong); Yu, YD (Yu, Yude); Yu, JZ (Yu, Jinzhong)
Book Group Author(s): IEEE
Title: High-Q and High-extinction-ratio Microdisk Add-drop Filter with Grating Couplers in Silicon-on-Insulator
Source: 2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2: 537-538 2009
Conference Title: 8th Pacific Rim Conference on Lasers and Electro-Optics
Conference Date: AUG 30-SEP 03, 2009
Conference Location: Shanghai, PEOPLES R CHINA
Abstract: A High-Q microdisk add-drop filter integrated with grating couplers in SOI was designed and fabricated By introducing asymmetrical coupling, resonance with a Q factor as high as 1.7x10(5) and an extinction-ratio over 15dB is obtained. The essentially critical coupling for a resonant mode with a Q factor of 4.2x10(4) is also realized
ISBN: 978-1-4244-3829-7


Record 13 of 20
Author(s): Wang, SJ (Wang, Shi-Jun); Xiao, JL (Xiao, Jin-Long); Huang, YZ (Huang, Yong-Zhen)
Book Group Author(s): IEEE
Title: High-Order Microring Filters on SOI Wafer
Source: 2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2: 547-548 2009
Conference Title: 8th Pacific Rim Conference on Lasers and Electro-Optics
Conference Date: AUG 30-SEP 03, 2009
Conference Location: Shanghai, PEOPLES R CHINA
Abstract: Series-coupled high-order microring channel drop filters are designed and fabricated by CMOS technique on SOI wafer The transmission spectra with the drop channel bandwidth of 0.028 nm are observed for the filter based on three coupled rings with the radius of 20 mu m, and coupling-induced resonance frequency shifts on fifth-order microrings filter are observed experimentally
ISBN: 978-1-4244-3829-7


Record 14 of 20
Author(s): Yin, XJ (Yin Xiaojie); Wu, YD (Wu Yuanda); Hu, XW (Hu Xiongwei)
Book Group Author(s): IEEE
Title: Design and Simulation Analysis of Spot-Size Converter in Silicon-On-Insulator
Source: 2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2: 1266-1267 2009
Conference Title: 8th Pacific Rim Conference on Lasers and Electro-Optics
Conference Date: AUG 30-SEP 03, 2009
Conference Location: Shanghai, PEOPLES R CHINA
Abstract: We have designed a novel Spot-Size converter (SSC) which is constructed with a tapered silicon waveguide and an overlaid rectangular sol-gel hybrid SiO2 waveguide Simulation analysis based on the three-dimensional beam propagation method (3D-BPM) shows the conversion efficiency can be up to 95% (loss of 0 22dB)
ISBN: 978-1-4244-3829-7


Record 15 of 20
Author(s): Li, ZY (Li, Z. -Y); Zhu, Y (Zhu, Y.); Zhou, L (Zhou, L.); Li, YT (Li, Y. -T.); Han, WH (Han, W. -H.); Fan, ZC (Fan, Z. -C.); Yu, YD (Yu, Y. -D.); Yu, JZ (Yu, J. -Z.)
Book Group Author(s): IEEE
Title: Diffractive Grating Based Out-of-Plane Coupling between Silicon Nanowire and Optical Fiber
Source: 2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2: 1276-1277 2009
Conference Title: 8th Pacific Rim Conference on Lasers and Electro-Optics
Conference Date: AUG 30-SEP 03, 2009
Conference Location: Shanghai, PEOPLES R CHINA
Abstract: A diffractive grating in silicon was demonstrated for near vertical off-chip coupling between Silicon-on-insulator (SOI) photonic nanowire and optical fiber. By simulation, the coupling efficiency of 46% from nanowire to fiber was predicted. Finally, the grating coupler with the efficiency of 25% and 3-dB bandwidth of 45 nm was obtained
ISBN: 978-1-4244-3829-7


Record 16 of 20
Author(s): Geng, MM (Geng, Minming); Jia, LX (Jia, Lianxi); Zhang, L (Zhang, Lei); Yang, L (Yang, Lin); Chen, P (Chen, Ping); Wang, T (Wang, Tong); Liu, YL (Liu, Yuliang)
Book Group Author(s): IEEE
Title: Reconfigurable Optical Add-Drop Multiplexer Based on Silicon Photonic Wire Waveguide
Source: 2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2: 1281-1282 2009
Conference Title: 8th Pacific Rim Conference on Lasers and Electro-Optics
Conference Date: AUG 30-SEP 03, 2009
Conference Location: Shanghai, PEOPLES R CHINA
Abstract: A four-channel thermally-tuning reconfigurable optical add-drop multiplexer based on silicon photonic wire is reported The minimum insertion loss is 10 7 dB, the tuning bandwidth 17 nm and the tuning power efficiency 6 187 mW/nm
ISBN: 978-1-4244-3829-7


Record 17 of 20
Author(s): Jia, LX (Jia, Lianxi); Geng, MM (Geng, Minming); Zhang, L (Zhang, Lei); Yang, L (Yang, Lin); Chen, P (Chen, Ping); Liu, YL (Liu, Yuliang)
Book Group Author(s): IEEE
Title: A simple method to realize large-bandwidth and high-efficiency wavelength conversion in Si waveguide
Source: 2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2: 1305-1306 2009
Conference Title: 8th Pacific Rim Conference on Lasers and Electro-Optics
Conference Date: AUG 30-SEP 03, 2009
Conference Location: Shanghai, PEOPLES R CHINA
Abstract: We present a method to simultaneously realize phase-matching and reduce the effective earner lifetime in the Si waveguide, with which -2 6-dB conversion efficiency and 300-nm conversion bandwidth are achieved in a properly designed Si waveguide
ISBN: 978-1-4244-3829-7


Record 18 of 20
Author(s): Huang, JL (Huang Jian-Liang); Wei, Y (Wei Yang); Ma, WQ (Ma Wen-Quan); Yang, T (Yang Tao); Chen, LH (Chen Liang-Hui)
Title: On detection wavelength and electron-hole wave function overlap of type II InAs/In-x Ga1-x Sb superlattice infrared photodetector
Source: ACTA PHYSICA SINICA, 59 (5): 3099-3106 MAY 2010
Abstract: In this paper, the detection wavelength and the electron-hole wave function overlap of InAs/IrxGa1-xSb type II superlattice photodetectors are numerically calculated by using the envelope function and the transfer matrix methods. The band offset is dealt with by employing the model solid theory, which already takes into account the lattice mismatch between InAs and InxGa1-xSb layers. Firstly, the detection wavelength and the wave function overlap are investigated in dependence on the InAs and InxGa1-xSb layer thicknesses, the In mole fraction, and the periodic number. The results indicate that the detection wavelength increases with increasing In mole fraction, InAs and InxGa1-xSb layer thicknesses, respectively. When increasing the periodic number, the detection wavelength first increases distinctly for small periodic numbers then increases very slightly for large period numbers. Secondly, the wave function overlap diminishes with increasing InAs and InxGa1-xSb layer thicknesses, while it enhances with increasing In mole fraction. The dependence of the wave function overlap on the periodic number shows the same trend as that of the detection wavelength on the periodic number. Moreover, for a constant detection wavelength, the wave function overlap becomes greater when the thickness ratio of the InAs over InxGa1-xSb is larger.
ISSN: 1000-3290


Record 19 of 20
Author(s): Zhao, J (Zhao, Jie); Zeng, YP (Zeng, Yiping); Liu, C (Liu, Chao); Li, YB (Li, Yanbo)
Title: Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
Source: JOURNAL OF CRYSTAL GROWTH, 312 (9): 1491-1495 APR 15 2010
Abstract: ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature. (C) 2010 Elsevier B.V. All rights reserved.
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.01.032


Record 20 of 20
Author(s): Zhu, NH (Zhu, Ning Hua); Xu, GZ (Xu, Gui Zhi); Hofmann, W (Hofmann, Werner); Chen, W (Chen, Wei); Bohm, G (Boehm, Gerhard); Liu, Y (Liu, Yu); Wang, X (Wang, Xin); Xie, L (Xie, Liang); Amann, MC (Amann, Markus-Christian)
Title: Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers
Source: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 58 (5): 1283-1289 Part 1 MAY 2010
Abstract: An equivalent-circuit model for a novel 1.55-mu m buried tunnel junction vertical-cavity surface-emitting laser chip is proposed based on the structure of the device. The values of the equivalent-circuit elements are determined by fitting the reflection and transmission coefficients at different bias currents. Good agreement between measured and simulated results implies the validity of the equivalent-circuit model. The influences of the buried tunnel junction, active region, and parasitic parameters on the high-frequency responses are investigated based on measurements and theoretical predictions. It is shown that the impedance of the device will change with the bias current, even if the bias current is above threshold, which is different from the edge-emitting laser, and the frequency responses depend on both the buried tunnel junction and mesa diameters.
ISSN: 0018-9480
DOI: 10.1109/TMTT.2010.2045561