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| Record 1 of 8 |
| Author(s): Misuraca, J (Misuraca, Jennifer); Trbovic, J (Trbovic, Jelena); Lu, J (Lu, Jun); Zhao, JH (Zhao, Jianhua); Ohno, Y (Ohno, Yuzo); Ohno, H (Ohno, Hideo); Xiong, P (Xiong, Peng); von Molnar, S (von Molnar, Stephan) |
| Title: Band-tail shape and transport near the metal-insulator transition in Si-doped Al0.3Ga0.7As |
| Source: PHYSICAL REVIEW B, 82 (12): Art. No. 125202 SEP 2 2010 |
| Abstract: In the present work, an infrared light-emitting diode is used to photodope molecular-beam-epitaxy-grown Si: Al0.3Ga0.7As, a well-known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of Si [1 x 10(19) cm(-3) for sample 1 (S1) and 9 x 10(17) cm(-3) for sample 2 (S2)] and vary the effective electron density between 10(14) and 10(18) cm(-3). The metal-insulator transition for S1 is found to occur at a critical carrier concentration of 5.7 x 10(16) cm(-3) at 350 mK. The mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the Brooks-Herring screening theory for higher carrier densities. The shape of the band tail of the density of states in Al0.3Ga0.7As is found electrically through transport measurements. It is determined to have a power-law dependence, with an exponent of -1.25 for S1 and -1.38 for S2. |
| ISSN: 1098-0121 |
| Article Number: 125202 |
| DOI: 10.1103/PhysRevB.82.125202 |
| Record 2 of 8 |
| Author(s): Kong, DH (Kong, D. H.); Zhu, HL (Zhu, H. L.); Liang, S (Liang, S.); Zhao, XF (Zhao, X. F.); Lou, CX (Lou, C. X.); Wang, L (Wang, L.); Wang, BJ (Wang, B. J.); Zhao, LJ (Zhao, L. J.) |
| Title: All-optical clock recovery using a ridge width varied two-section partly gain-coupled DFB self-pulsation laser |
| Source: OPTICS COMMUNICATIONS, 283 (20): 3970-3975 OCT 15 2010 |
| Abstract: A 1.55 mu m InGaAsP-InP partly gain-coupled two-section DFB self-pulsation laser (SPL) with a varied ridge width has been fabricated. The laser produces self-pulsations with a frequency tuning range of more than 135 GHz. All-optical clock recovery from 40 Gb/s degraded data streams has been demonstrated. Successful lockings of the device at frequencies of 30 GHz, 40 GHz, 50 GHz, and 60 GHz to a 10 GHz sidemode injection are also conducted, which demonstrates the capability of the device for all-optical clock recovery at different frequencies. This flexibility of the device is highly desired for practical uses. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved. |
| ISSN: 0030-4018 |
| DOI: 10.1016/j.optcom.2010.06.022 |
| Record 3 of 8 |
| Author(s): Zhang, LB (Zhang, L. B.); Chang, K (Chang, Kai); Xie, XC (Xie, X. C.); Buhmann, H (Buhmann, H.); Molenkamp, LW (Molenkamp, L. W.) |
| Title: Quantum tunneling through planar p-n junctions in HgTe quantum wells |
| Source: NEW JOURNAL OF PHYSICS, 12: Art. No. 083058 AUG 27 2010 |
| Abstract: We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. The opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the Fermi energy and the strength of the Rashba spin-orbit interaction (RSOI). The occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional (Q1D) p-n junction can be switched on and off by tuning the gate voltage. The spin orientation can be substantially rotated when the samples exhibit a moderately strong RSOI. |
| ISSN: 1367-2630 |
| Article Number: 083058 |
| DOI: 10.1088/1367-2630/12/8/083058 |
| Record 4 of 8 |
| Author(s): Ding, F (Ding, Fei); Ji, HX (Ji, Hengxing); Chen, YH (Chen, Yonghai); Herklotz, A (Herklotz, Andreas); Dorr, K (Doerr, Kathrin); Mei, YF (Mei, Yongfeng); Rastelli, A (Rastelli, Armando); Schmidt, OG (Schmidt, Oliver G.) |
| Title: Stretchable Graphene: A Close Look at Fundamental Parameters through Biaxial Straining |
| Source: NANO LETTERS, 10 (9): 3453-3458 SEP 2010 |
| Abstract: Tunable biaxial stresses, both tensile and compressive, are applied to a single layer graphene by utilizing piezoelectric actuators. The Gruneisen parameters for the phonons responsible for the D, G, 2D and 2D' peaks are studied. The results show that the D peak is composed of two peaks, unambiguously revealing that the 2D peak frequency (omega(2D)) is not exactly twice that of the D peak (omega(D)). This finding is confirmed by varying the biaxial strain of the graphene, from which we observe that the shift of omega(2D)/2 and omega(D) are different. The employed technique allows a detailed study of the interplay between the graphene geometrical structures and its electronic properties. |
| ISSN: 1530-6984 |
| DOI: 10.1021/nl101533x |
| Record 5 of 8 |
| Author(s): Li, LS (Li, Linsen); Guan, M (Guan, Min); Cao, GH (Cao, Guohua); Li, YY (Li, Yiyang); Zeng, YP (Zeng, Yiping) |
| Title: Tandem organic light-emitting diodes with an effective charge-generation connection structure |
| Source: SOLID STATE COMMUNICATIONS, 150 (35-36): 1683-1685 SEP 2010 |
| Abstract: The tandem organic light-emitting diodes (OLEDs) with an effective charge-generation connection structure of Mg-doped tris(8-hydroxyquinoline) aluminum (Alq(3))/Molybdenum oxide (MoO3)-doped 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) were presented. At a current density of 50 mA/cm(2), the current efficiency of the tandem OLED with two standard NPB/Alq(3) emitting units is 4.2 cd/A, which is 1.7 times greater than that of the single EL device. The tandem OLED with the similar connection structure of Mg-doped PTCDA/MoO3-doped PTCDA was also fabricated and the influences of the different connection units on the current efficiency of the tandem OLED were discussed as well. (C) 2010 Elsevier Ltd. All rights reserved. |
| ISSN: 0038-1098 |
| DOI: 10.1016/j.ssc.2010.06.026 |
| Record 6 of 8 |
| Author(s): Wang, Y (Wang, Y.); Chen, NF (Chen, N. F.); Zhang, XW (Zhang, X. W.); Huang, TM (Huang, T. M.); Yin, ZG (Yin, Z. G.); Bai, YM (Bai, Y. M.) |
| Title: Evaluating 0.53 eV GaInAsSb thermophotovoltaic diode based on an analytical absorption model |
| Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 25 (9): Art. No. 095002 SEP 2010 |
| Abstract: Radiant heat conversion performance dominated by the active layer of Ga0.84In0.16As0.14Sb0.86 diode has been systematically investigated based on an analytic absorption spectrum, which is suggested here by numerically fitting the limited experimental data. For the concerned diode configuration, our calculation demonstrates that the optimal base doping is 3-4 x 10(17) cm(-3), which is less sensitive to the variation of the external radiation spectrum. Given the scarcity of the alloy elements, an economical device configuration of the 0.2-0.6 mu m emitter and the 4-6 mu m base would be particularly acceptable because the corresponding conversion efficiency cannot exhibit discouraging degradation in comparison to the one for the optimal structure, the thickness of which may be up to 10 mu m. More importantly, the method we suggested here to calculate alloy absorption can be easily transferred to other composition, thus bringing great convenience for design or optimization of the optoelectronic device formed by these alloys. |
| ISSN: 0268-1242 |
| Article Number: 095002 |
| DOI: 10.1088/0268-1242/25/9/095002 |
| Record 7 of 8 |
| Author(s): Islam, MR (Islam, M. R.); Hasan, MM (Hasan, M. M.); Chen, N (Chen, N.); Fukuzawa, M (Fukuzawa, M.); Yamada, M (Yamada, M.) |
| Title: Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb |
| Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 25 (9): Art. No. 095010 SEP 2010 |
| Abstract: The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ion implantation, deposition and post-annealing has been presented. The experiments are performed both in implanted and unimplanted regions before and after etching the samples. The Raman spectra measured from the unimplanted region show only GaSb-like phonon modes. On the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). The experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to Mn ion implantation, deposition and annealing processes. Furthermore, we have determined the hole concentration as a function of laser probing position by modeling the Raman spectra using coupled mode theory. The contributions of GaSb-like phonon modes and coupled LO-phonon plasmon mode are taken into consideration in the model. The hole-concentration-dependent CLOPM is resolved in the spectra measured from the implanted and nearby implanted regions. The hole concentrations determined by Raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique. |
| ISSN: 0268-1242 |
| Article Number: 095010 |
| DOI: 10.1088/0268-1242/25/9/095010 |
| Record 8 of 8 |
| Author(s): Meng, KK (Meng, K. K.); Lu, J (Lu, J.); Wang, SL (Wang, S. L.); Meng, HJ (Meng, H. J.); Zhao, JH (Zhao, J. H.); Misuraca, J (Misuraca, J.); Xiong, P (Xiong, P.); von Molnar, S (von Molnar, S.) |
| Title: Magnetic anisotropies of laterally confined structures of epitaxial Fe films on GaAs (001) |
| Source: APPLIED PHYSICS LETTERS, 97 (7): Art. No. 072503 AUG 16 2010 |
| Abstract: We have investigated magnetic properties of laterally confined structures of epitaxial Fe films on GaAs (001). Fe films with different thicknesses were grown by molecular-beam epitaxy and patterned into regular arrays of rectangles with varying aspect ratios. In-plane magnetic anisotropy was observed in all of the patterned Fe films both at 15 and 300 K. We have demonstrated that the coercive fields can be tuned by varying the aspect ratios of the structures. The magnitudes of the corresponding anisotropy constants have been determined and the shape anisotropy constant is found to be enhanced as the aspect ratio is increased. (C) 2010 American Institute of Physics. [doi:10.1063/1.3480423] |
| ISSN: 0003-6951 |
| Article Number: 072503 |
| DOI: 10.1063/1.3480423 |
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