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Compound Semiconductor News - December 2
[2010-12-14]
 
     
 
 
     
 
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TurboDisc® K465i™

The new TurboDisc  K465i GaN MOCVD System for high volume LED manufacturing provides the industry's highest capital efficiency with highest productivity and best-in-class yields. For more information, please visit www.veeco.com/mocvd

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LATEST INDUSTRY NEWS - view all

 
 

 

 

Monocrystal Introduces 10-inch Sapphire Substrates for LEDs - Dec 09, 2010
The Russian based firm says that currently sapphire substrates are used for more than 90%...

Panasonic Develops GaN Power Transistor on Silicon - Dec 09, 2010
The new GaN transistor extends the operating voltages of a variety of power switching systems...

Graphenea SL Advances High Quality Thin Films with Black Magic - Dec 09, 2010
Aixtron has received an order for a 4-inch wafer configuration Black Magic deposition system from...

San'an & Emcore Establish JV in Huainan, China - Dec 08, 2010
The joint venture "Suncore" aims to produce CPV receivers, modules and systems for terrestrial solar...

Ultrapure GaAs Makes An Ultrasensitive Microwave Detector - Dec 08, 2010
Researchers used magnets to tune supercooled gallium arsenide (GaAs) into a photon detector. This latest...

Intel to use Ge & InGaAs to Speed Up Transistors - Dec 07, 2010
Ge P-channel transistors could potentially be combined with complementary III-V N-channel transistors to form a...

Peregrine & Soitec To Soar With SOS Development - Dec 07, 2010
The two firms have formed a JV to develop Silicon-on-Sapphire (SOS) substrates for RFIC Manufacturing....

Goodrich to Develop SWIR Cameras for AFRL - Dec 07, 2010
The InGaAs Goodrich system is extremely small, low power and lightweight and advanced circuitry allows...

Turning III-V Science into High-Tech Products - Dec 06, 2010
Aixtron & Aachen University are hosting a two-day workshop in Aachen focused on the latest...

Ultratech Opens New HB-LED Facility in Singapore - Dec 06, 2010
The plant will be capable of producing over 100 lithography steppers annually for the advanced...

SPTS not Blue with PVD System Order from TowerJazz - Dec 06, 2010
Israeli firm TowerJazz has ordered the Sigma fxPTM for manufacturing advanced power devices including aluminium...

 

LATEST PRODUCT NEWS - view all

 
 

 

 

Mitsubishi Electric Unveils InGaP HBTs for Amps in Satellite Digital Radios - Dec 08, 2010
These amplifiers best operate in combination with the MGF4921AM, Mitsubishi Electric's low noise gallium arsenide...

GigOptix ASIC to Be Big in Japan - Dec 07, 2010
The firm has appointed Solekia as its distributor in Japan to expand sales for its...

Edwards Expands ixa Vacuum Pump Family - Dec 03, 2010
The new stp-iXA2206 and ixa3306 fully-integrated pumps feature superior performance and reduced footprint....

Osram Opto's LEDs Used in Tchibo Sustainable Coffee Bars - Dec 02, 2010
The 'Dropled 100' pendulum luminaires employ three OSLON SSL 80 LEDs and were chosen for...

Bronkhorst Introduces CORI-FILL for Small Mass Flow Rates - Dec 02, 2010
The new compact solution can be employed in the firm's mini CORI-FLOW MFCs. Possible uses...

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LATEST FINANCIAL NEWS - view all

 
 

 

 

Avago to Present at Barclays Technology Conference - Dec 07, 2010
The firm will present its latest results at the Barclays Capital 2010 Global Technology on...

Finisar Reports Record Revenues & Return to Profitability - Dec 03, 2010
The firm has announced second fiscal year quarterly revenues of $240.9 million and net income...

JDSU Stockholders Approve All Proposals at 2010 Annual Meeting - Dec 01, 2010
The firm plan to increase the maximum number of shares of common stock that may...

RFMD to Present at Global Technology Conference - Nov 30, 2010
The RF specialist will present at Barclays Capital Conference in San Francisco on December 8,...

Hittite to Present at the Barclays Capital 2010 Global Technology Conference - Nov 23, 2010
The firm's Chairman, President and CEO, Stephen G. Daly and VP and CFO, William W....

 
 
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latest features

 
 

 

 


Semi-Polar GaN LDs Greener in More Ways Than One

Nov 24, 2010
Scientists at SEI have shown that green laser diodes grown on the semi-polar GaN ...

Is XeF2/Ge Etch Process The Future For Epitaxial Liftoff?

Nov 12, 2010
Researchers in Austria and the U.S.A have demonstrated a novel room temperature lateral etching process ...

 
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CS Europe conference - 22nd March 2011, Hilton, Frankfurt

 
 

 

 

What next for the Compound Semiconductor Industry  -  presented at CSEurope conference www.CSEurope.net

- What next for the Compound Semiconductor Industry  -  presented at CSEurope conference by Klaus H. Ploog, Pioneer of Molecular Beam Epitaxy (MBE)

- Role of GaN RF Power Technology for Tomorrow's Commercial and Defence Wireless Applications -  presented at CSEurope conference by Jeff Shealy, Division Vice President, RFMD

- How to make a state-of-the-art visible red laser, what its specs are, and what new markets it can target -  presented at CSEurope conference by Dr. Petteri Uusimaa, President, Modulight

- The urgency for the world to make power grids digital (smart grids) and photovoltaic developments for electricity production from solar -  presented at CSEurope conference by Jan-Gustav Werthen, Senior Director, Photovoltaics, JDSU

- 3G/4G requirements for wireless systems and the role GaAs and GaN devices will play in meeting these requirements -  presented at CSEurope conference by Dr Otto Berger, Corporate Advanced Technology Director, TriQuint Semiconductor, Inc

- What's needed from GaAs and GaN for tomorrow's wireless -  presented at CSEurope conference by Marc Rocchi, CEO, OMMIC

- Recent Progress on Green InGaN Laser Diode Development at OSRAM Opto Semiconductors -  presented at CSEurope conference by Alexander Bachmann, Marketing Engineer, OSRAM Opto Semiconductors GmbH

- What are the success factors for the deployment of Solid State Lighting? -  presented at CSEurope conference by Dr. Michael Fiebig, Director Marketing and Business Development Solid State Lighting, OSRAM Opto Semiconductors GmbH

- How will SiC power devices help getting a greener planet -  presented at CSEurope conference by Mats Reimark, CEO, TranSiC

- SiC Advances for Power Electronic Applications -  presented at CSEurope conference by Dr. Markus Behet, Europe Business Development Manager, Dow Corning Compound Semiconductor

- Future Proofing Networks with 100 Gigabit Optics -  presented at CSEurope conference by Scott Parker, Executive Vice President Sales and Marcom, Oclaro, Inc

- High performance compound semiconductors for infrastructure, automotive and defence applications -  presented at CSEurope conference by Dr. Ulf Meiners, Chief Technical Officer, UMS and Mark Murphy, Director Marketing, RF Power & Base, NXP

- Batch and single wafer processing strategies for HBLEDs -  presented at CSEurope conference by Dr Mike Cooke, Chief Technology Officer, Oxford Instruments Plasma Technology

- GaN power electronics: Market forecasts and industry status -  presented at CSEurope conference by Dr. Philippe ROUSSEL, Project manager Power Electronics and Compound Semiconductors, Yole Développement

- Efficient High-Voltage GaN Devices and ICs for Next Generation Power Management Solutions -  presented at CSEurope conference by Dr. Ertugrul Sönmez, Business Development, MicroGaN GmbH

- Standardisation in compound semiconductors - an essential step for furthering the efficiency & profitability of the industry. -  presented at CSEurope conference by Roy Blunt, SEMI International Compound Standards

- GaN - meeting emissions regulations - presented at CSEurope conference by Mike Czerniak, Product Marketing Manager, Exhaust Gas Management, Edwards

- Engineered Substrates for future compound semiconductor devices presented at CSEurope conference by Dr. Thomas Uhrmann, Business Development Manager, EV Group (EVG)


CSEurope web site: www.CSEurope.net
Delegate booking: http://www.cseurope.net/register.php
Contact: info@cseurope.net

     
 
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