1. Design of ultracompact triplexer based on Si nanowire AWG An, Jun-Ming (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China); Li, Jun-Yi; Song, Shi-Jiao; Zhao, Lei; Wu, Yuan-Da; Hu, Xiong-Wei Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 8, p 1115-1118, August 2010 Language: Chinese Database: Compendex 2. Fabrication and analysis of double bonded long wavelength vertical cavity surface emitting laser He, Guo-Rong (Department of Electronic and Communication Technology, Shenzhen Institute of Information Technology, Shenzhen 518029, China); Qu, Hong-Wei; Zheng, Wan-Hua; Chen, Liang-Hui Source: Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, v 39, n 4, p 618-622, August 2010 Language: Chinese Database: Compendex 3. Eight-channel add-drop microring filters on SOI wafer Wang, Shi-Jun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China); Huang, Yong-Zhen Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 8, p 1125-1128, August 2010 Language: Chinese Database: Compendex 4. The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy Zhou, G.Y. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, Y.H.; Tang, C.G.; Liang, L.Y.; Jin, P.; Wang, Z.G. Source: Journal of Applied Physics, v 108, n 8, October 15, 2010 Database: Compendex 5. Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates Wei, Meng (Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Wang, Xiaoliang; Pan, Xu; Xiao, Hongling; Wang, Cuimei; Yang, Cuibai; Wang, Zhanguo Source: Journal of Materials Science: Materials in Electronics, p 1-5, 2010 Article in Press Database: Compendex 6. Different growth mechanisms of bimodal InAs/GaAs QDs Zhou, G.Y. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, Y.H.; Zhou, X.L.; Xu, B.; Ye, X.L.; Wang, Z.G. Source: Physica E: Low-Dimensional Systems and Nanostructures, v 43, n 1, p 308-311, November 2010 Database: Compendex 7. Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures Jianzhi, Zhao (School of Physics, Shandong University, Jinan 250100, China); Zhaojun, Lin; Yuanjie, L¨¹; Timothy D, Corrigan; Lingguo, Meng; Yu, Zhang; Zhanguo, Wang; Hong, Chen Source: Journal of Semiconductors, v 31, n 8, August 2010 Database: Compendex 8. Design and fabrication of an 8-channel and 1.6 nm arrayed waveguide grating based on Si nanowires Zhao, Lei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); An, Jun-Ming; Zhang, Jia-Shun; Song, Shi-Jiao; Wu, Yuan-Da; Hu, Xiong-Wei Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 11, p 1589-1592, November 2010 Language: Chinese Database: Compendex 9. Design and fabrication of Si LED with the N-well-P+ junction based on standard CMOS technology Yang, Guang-hua (School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China); Mao, Lu-hong; Huang, Chun-hong; Wang, Wei; Guo, Wei-lian Source: Optoelectronics Letters, v 6, n 1, p 15-17, 2010 Database: Compendex 10. Self-heating effect on the two-state lasing behaviors in 1.3-¦Ìm InAs-GaAs quantum-dot lasers Ji, Hai-Ming (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yang, Tao; Cao, Yu-Lian; Xu, Peng-Fei; Gu, Yong-Xian; Wang, Zhan-Guo Source: Japanese Journal of Applied Physics, v 49, n 7 PART 1, p 0721031-0721034, July 2010 Database: Compendex 11. Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb Islam, M.R. (Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna-9203, Bangladesh); Hasan, M.M.; Chen, N.; Fukuzawa, M.; Yamada, M. Source: Semiconductor Science and Technology, v 25, n 9, September 2010 Database: Compendex 12. Application of holographic technique to the photonic crystal quantum cascade lasers Lu, Quan-Yong (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Liu, Feng-Qi; Wang, Li-Jun; Liu, Jun-Qi; Li, Lu; Wang, Zhan-Guo Source: Proceedings of SPIE - The International Society for Optical Engineering, v 7657, 2010, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems Database: Compendex 13. InGaAsP-InP square microlasers with a vertex output waveguide Che, Kai-Jun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Lin, Jian-Dong; Huang, Yong-Zhen; Yang, Yue-De; Xiao, Jin-Long; Du, Yun Source: IEEE Photonics Technology Letters, v 22, n 18, p 1370-1372, 2010 Database: Compendex 14. 40-Gb/s all-optical 3R regeneration with semiconductor devices Zhao, Xiaofan (State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China); Wang, Li; Lu, Dan; Lou, Caiyun; Sun, Yu; Zhao, Lingjuan; Wang, Wei Source: WOCC2010 Technical Program - The 19th Annual Wireless and Optical Communications Conference: Converging Communications Around the Pacific, 2010, WOCC2010 Technical Program - The 19th Annual Wireless and Optical Communications Conference: Converging Communications Around the Pacific Database: Compendex 15. Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer Wang, H. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083, China); Jiang, D.S.; Jahn, U.; Zhu, J.J.; Zhao, D.G.; Liu, Z.S.; Zhang, S.M.; Yang, H. Source: Thin Solid Films, v 518, n 17, p 5028-5031, 2010 Database: Compendex 16. Role of Bi3+ ions for Er3+ ions efficient 1.54 ¦Ìm light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method Zheng, J. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zuo, Y.H.; Zhang, L.Z.; Wang, W.; Xue, C.L.; Cheng, B.W.; Yu, J.Z.; Guo, H.Q.; Wang, Q.M. Source: Journal of Luminescence, v 130, n 10, p 1760-1763, 2010 Database: Compendex 17. An image retrieval algorithm based on biomimetic imaginal thinking Wang, Shou-Jue (Institute of Semiconductors, CAS, Beijing 100083, China); Sun, Hua; Liu, Pei-Zhong; Liao, Ying-Hao; Ding, Xing-Hao; Guo, Dong-Hui Source: Tien Tzu Hsueh Pao/Acta Electronica Sinica, v 38, n 5, p 993-997, May 2010 Language: Chinese Database: Compendex 18. Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films Liu, B. (Department of Physics, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China); Zhang, Z.; Zhang, R.; Fu, D.Y.; Xie, Z.L.; Lu, H.; Schaff, W.J.; Song, L.H.; Cui, Y.C.; Hua, X.M.; Han, P.; Zheng, Y.D.; Chen, Y.H.; Wang, Z.G. Source: Applied Physics A: Materials Science and Processing, v 99, n 1, p 139-143, April 2010 Database: Compendex 19. Wavelength coded optical time-domain reflectometry Zhu, Ning Hua (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Ke, Jian Hong; Zhang, Hong Guang; Chen, Wei; Liu, Jian Guo; Zhao, Ling Juan; Wang, Wei Source: Journal of Lightwave Technology, v 28, n 6, p 972-977, 2010 Database: Compendex 20. Room temperature operation of photonic-crystal distributed-feedback quantum cascade lasers with single longitudinal and lateral mode performance Lu, Quan-Yong (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Guo, Wan-Hong; Zhang, Wei; Wang, Li-Jun; Liu, Jun-Qi; Li, Lu; Liu, Feng-Qi; Wang, Zhan-Guo Source: Applied Physics Letters, v 96, n 5, 2010 Database: Compendex 21. Temperature-dependent modulation characteristics for 1.3 ¦Ìm InAs/GaAs quantum dot lasers Xu, Peng-Fei (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yang, Tao; Ji, Hai-Ming; Cao, Yu-Lian; Gu, Yong-Xian; Liu, Yu.; Ma, Wen-Quan; Wang, Zhan-Guo Source: Journal of Applied Physics, v 107, n 1, 2010 Database: Compendex 22. Effect of bath temperature on the properties of CuInxGa 1-x Se2 thin films grown by the electrodeposition technique Jie, Cao (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Shengchun, Qu; Kong, Liu; Zhanguo, Wang Source: Journal of Semiconductors, v 31, n 8, August 2010 Database: Compendex 23. Magnetic frustration induced quantum phase transitions in the S = 1/2 vertically asymmetric diamond chain Li, Yan-Chao (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China) Source: Physica A: Statistical Mechanics and its Applications, v 389, n 23, p 5550-5555, 2010 Database: Compendex 24. Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy Shi, K. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China); Li, D.B.; Song, H.P.; Guo, Y.; Wang, J.; Xu, X.Q.; Liu, J.M.; Yang, A.L.; Wei, H.Y.; Zhang, B.; Yang, S.Y.; Liu, X.L.; Zhu, Q.S.; Wang, Z.G. Source: Nanoscale Research Letters, p 1-5, 2010 Article in Press Database: Compendex 25. Evaluating 0.53 eV GaInAsSb thermophotovoltaic diode based on an analytical absorption model Wang, Y. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China); Chen, N.F.; Zhang, X.W.; Huang, T.M.; Yin, Z.G.; Bai, Y.M. Source: Semiconductor Science and Technology, v 25, n 9, September 2010 Database: Compendex 26. Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain Yin, Chunming (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China); Shen, Bo; Zhang, Qi; Xu, Fujun; Tang, Ning; Cen, Longbin; Wang, Xinqiang; Chen, Yonghai; Yu, Jinling Source: Applied Physics Letters, v 97, n 18, November 1, 2010 Database: Compendex 27. Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers Tang, Hai-Ma (Department of Physics, University of Jinan, Jinan 250022, China); Zheng, Zhong-Shan; Zhang, En-Xia; Yu, Fang; Li, Ning; Wang, Ning-Juan Source: Chinese Physics B, v 19, n 10, October 2010 Database: Compendex 28. Sub-nanosecond optical switch based on silicon racetrack resonator Xu, Hai-Hua (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Huang, Qing-Zhong; Li, Yun-Tao; Yu, Yu-De; Yu, Jin-Zhong Source: Chinese Physics B, v 19, n 8, August 2010 Database: Compendex 29. Epitaxial growth of ZnO on GaN/sapphire substrate by radio-frequency magnetron sputtering Xiaoli, Yang (Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Nuofu, Chen; Zhigang, Yin; Xingwang, Zhang; Yang, Li; Jingbi, You; Yu, Wang; Jingjing, Dong; Min, Cui; Yun, Gao; Tianmao, Huang; Xiaofeng, Chen; Yanshuo, Wang Source: Journal of Semiconductors, v 31, n 9, September 2010 Database: Compendex 30. Real-time counting of single electron tunneling through a T-shaped double quantum dot system Luo, Junyan (School of Science, Zhejiang University of Science and Technology, Hangzhou 310023, China); Wang, Shi-Kuan; He, Xiao-Ling; Li, Xin-Qi; Yan, Yijing Source: Journal of Applied Physics, v 108, n 8, October 15, 2010 Database: Compendex 31. Single wall carbon nanotube absorber with polarization absorption grown by vertical evaporation method Wang, Y.G. (Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Ma, X.Y. Source: Laser Physics, p 1-5, 2010 Article in Press Database: Compendex 32. Fabrication of a low-loss SSC using high-dose electron beam lithography exposure with negative PMMA resist Liu, Yan (State Key Laboratory on Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xu, Xuejun; Xing, Bo; Yu, Yude; Yu, Jinzhong Source: IEEE Photonics Technology Letters, v 22, n 7, p 501-503, April 1, 2010 Database: Compendex 33. Luminescence nanocrystals for solar cell enhancement Liu, Shu-Man (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, P.O. Box 912, Beijing 100083, China); Chen, Wei; Wang, Zhan-Guo Source: Journal of Nanoscience and Nanotechnology, v 10, n 3, p 1418-1429, March 2010 Database: Compendex 34. Frequency-pushing effect in single-mode diode laser subject to external dual-beam injection Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China); Zhu, Ning Hua; Wang, Li Xian; Ke, Jian Hong; Chen, Shuo Fu; Qi, Xiao Qiong; Zhang, Bang Hong; Xie, Liang Source: IEEE Journal of Quantum Electronics, v 46, n 5, p 796-803, 2010 Database: Compendex 35. Origin of antiferromagnetism in CoO: A density functional theory study Deng, Hui-Xiong (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Jingbo; Li, Shu-Shen; Xia, Jian-Bai; Walsh, Aron; Wei, Su-Huai Source: Applied Physics Letters, v 96, n 16, April 19, 2010 Database: Compendex 36. Codoping of magnesium with oxygen in gallium nitride nanowires Wang, Zhiguo (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Jingbo; Gao, Fei; Weber, William J. Source: Applied Physics Letters, v 96, n 10, 2010 Database: Compendex 37. Electronic structure and magnetic coupling properties of Gd-doped AlN: First-principles calculations Zhang, Y.J. (Department of Physics, Beijing Normal University, 100875 Beijing, China); Shi, H.-L.; Wang, S.X.; Zhang, P.; Li, R.W. Source: European Physical Journal B, v 77, n 3, p 345-349, October 2010 Database: Compendex 38. Breakthroughs and developments of semiconductor laser in China Wang, Qiming (State key Joint Laboratory for Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China) Source: Zhongguo Jiguang/Chinese Journal of Lasers, v 37, n 9, p 2190-2197, September 2010 Language: Chinese Database: Compendex 39. Semi-Supervised Discriminant Analysis based on Manifold Distance Wei, Lai (Department of Computer Science and Technology, Tongji University, Shanghai 201804, China); Wang, Shou-Jue Source: Ruan Jian Xue Bao/Journal of Software, v 21, n 10, p 2445-2453, October 2010 Language: Chinese Database: Compendex 40. Formation trends of ordered self-assembled nanoislands on stepped substrates Liang, S. (Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhu, H.L.; Kong, D.H.; Wang, W. Source: Journal of Applied Physics, v 108, n 7, October 1, 2010 Database: Compendex 41. First principles study of the electronic properties of twinned SiC nanowires Wang, Zhiguo (Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China); Wang, Shengjie; Zhang, Chunlai; Li, Jingbo Source: Journal of Nanoparticle Research, p 1-7, 2010 Article in Press Database: Compendex 42. Mode characteristics of metallically coated square microcavity connected with an output waveguide Che, Kai-Jun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Huang, Yong-Zhen Source: Journal of Applied Physics, v 107, n 11, June 1, 2010 Database: Compendex 43. Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition Zhou, Zhiwen (Department of Electronic Communication Technology, Shenzhen Institute of Information and Technology, Shenzhen, Guangdong 518029, China); He, Jingkai; Wang, Ruichun; Li, Cheng; Yu, Jinzhong Source: Optics Communications, v 283, n 18, p 3404-3407, September 15, 2010 Database: Compendex 44. Magnetoresistance in a nominally undoped InGaN thin film Ding, K. (Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Zeng, Y.P.; Li, Y.Y.; Cui, L.J.; Wang, J.X.; Lu, H.X.; Cong, P.P. Source: Applied Physics A: Materials Science and Processing, v 99, n 1, p 63-66, April 2010 Database: Compendex 45. The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots Huang, X. (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Zhang, X.H.; Zhu, Y.G.; Li, T.; Han, L.F.; Shang, X.J.; Ni, H.Q.; Niu, Z.C. Source: Journal of Optics, v 12, n 5, 2010 Database: Compendex 46. Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach Ding, Y. (School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore); Fan, W.J.; Xu, D.W.; Tong, C.Z.; Liu, Y.; Zhao, L.J. Source: Applied Physics B: Lasers and Optics, v 98, n 4, p 773-778, March 2010 Database: Compendex 47. Theoretical gain of strained GeSn0.02/Ge1-x-y SixSny quantum well laser Zhu, Yuan-Hui (School of EEE, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore); Xu, Qiang; Fan, Wei-Jun; Wang, Jian-Wei Source: Journal of Applied Physics, v 107, n 7, April 1, 2010 Database: Compendex 48. Quantum tunneling through graphene nanorings Wu, Zhenhua (SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing, China); Zhang, Z.Z.; Chang, Kai; Peeters, F.M. Source: Nanotechnology, v 21, n 18, 2010 Database: Compendex 49. A nonlinearity measurement and correction system of multi gray level digital driving of LD Yang, Chen (Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China); Cui, Guo-Xin; Huang, Yu-Yang; Zhang, Yao-Hui; Yang, Hui Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 2, p 249-251, February 2010 Language: Chinese Database: Compendex 50. Rashba electron transport in one-dimensional quantum waveguides Liu, Duanyang (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Beijing 100083, China); Xia, Jianbai; Chang, Yiachung Source: Science China: Physics, Mechanics and Astronomy, v 53, n 1, p 16-23, January 2010 Database: Compendex 51. Comparing the performance of Biomimetic pattern recognition with W8 and SVM on prediction of Horizontal gene transfers in bacteria genomes Chen, Yang (Laboratory of Artificial Neural Networks, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Shoujue Source: Chinese Journal of Electronics, v 19, n 1, p 86-90, January 2010 Database: Compendex 52. Tensile and compressive mechanical behavior of twinned silicon carbide nanowires Wang, Z.G. (Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China); Li, J.B.; Gao, F.; Weber, W.J. Source: Acta Materialia, v 58, n 6, p 1963-1971, April 2010 Database: Compendex 53. A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission L¨¹, Xue-Qin (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Jin, Peng; Wang, Zhan-Guo Source: Chinese Physics B, v 19, n 1, 2010 Database: Compendex 54. Optimization of grid design for solar cells Liu, Wen (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Yueqiang; Chen, Jianjun; Chen, Yanling; Wang, Xiaodong; Yang, Fuhua Source: Journal of Semiconductors, v 31, n 1, 2010 Database: Compendex 55. A highly efficient light-trapping structure for thin-film silicon solar cells Zhao, L. (Solar Cell Technology Group, Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Institute of Electrical Engineering, The Chinese Academy of Sciences, Beijing 100190, China); Zuo, Y.H.; Zhou, C.L.; Li, H.L.; Diao, H.W.; Wang, W.J. Source: Solar Energy, v 84, n 1, p 110-115, January 2010 Database: Compendex 56. Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film on ITO glass and its application in photovoltaic device Yan, Jun (Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China); Sun, Chenghua; Tan, Furui; Hu, Xiujie; Chen, Ping; Qu, Shengchun; Zhou, Shuyun; Xu, Jingkun Source: Solar Energy Materials and Solar Cells, v 94, n 2, p 390-394, February 2010 Database: Compendex 57. Analysis of surface morphology and chemical composition of InAs single crystal substrate Hu, Wei-Jie (Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China); Zhao, You-Wen; Duan, Man-Long; Wang, Ying-Li; Wang, Jun Source: Rengong Jingti Xuebao/Journal of Synthetic Crystals, v 39, n 4, p 878-882, August 2010 Language: Chinese Database: Compendex 58. Defects in gallium nitride nanowires: First principles calculations Wang, Zhiguo (Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China); Li, Jingbo; Gao, Fei; Weber, William J. Source: Journal of Applied Physics, v 108, n 4, August 15, 2010 Database: Compendex 59. Optical properties of InN rods on sapphire grown by metalorganic chemical vapor deposition Sun, Yuanping (Institute of Science and Technology for Opto-electronic Information, Yantai University, Yantai 264005, China); Cho, Yong-Hoon; Dai, Zhenhong; Wang, Weitian; Wang, Hui; Wang, Lili; Zhang, Shuming; Yang, Hui Source: Physica E: Low-Dimensional Systems and Nanostructures, v 43, n 1, p 138-141, November 2010 Database: Compendex 60. Distributed feedback terahertz quantum cascade lasers with complex-coupled metallic gratings Chen, J.Y. (Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Semiconductor Materials Science, Beijing 100083, China); Liu, J.Q.; Liu, F.Q.; Li, L.; Wang, L.J.; Wang, Z.G. Source: Electronics Letters, v 46, n 19, p 1340-1341, September 16, 2010 Database: Compendex 61. The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD Shi, K. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China); Yang, A.L.; Wang, J.; Song, H.P.; Xu, X.Q.; Sang, L.; Wei, H.Y.; Yang, S.Y.; Liu, X.L.; Zhu, Q.S.; Wang, Z.G. Source: Journal of Crystal Growth, 2010 Article in Press Database: Compendex 62. Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films Ying, J. (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083, China); Zhang, X.W.; Fan, Y.M.; Tan, H.R.; Yin, Z.G. Source: Diamond and Related Materials, v 19, n 11, p 1371-1376, 2010 Database: Compendex 63. Broadly tunable grating-coupled external cavity laser with quantum-dot active region Lv, X.Q. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Jin, P.; Wang, Z.G. Source: IEEE Photonics Technology Letters, v 22, n 24, p 1799-1801, 2010 Database: Compendex 64. First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions Wang, Zhiguo (Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China); Zhang, Chunlai; Li, Jingbo; Gao, Fei; Weber, William J. Source: Computational Materials Science, v 50, n 2, p 344-348, 2010 Database: Compendex 65. Broadband short-range surface plasmon structures for absorption enhancement in organic photovoltaics Bai, Wenli (Electrical and Computer Engineering Department, Lehigh University, Bethlehem, PA 18015, United States); Gan, Qiaoqiang; Song, Guofeng; Chen, Lianghui; Kafafi, Zakya; Bartoli, Filbert Source: Optics Express, v 18, n 23, p A620-A630, November 8, 2010 Database: Compendex 66. Controlling the electrical transport properties of graphene by in situ metal deposition Ren, Yujie (School of Mechanical Engineering, University of Science and Technology Beijing, Beijing 100083, China); Chen, Shanshan; Cai, Weiwei; Zhu, Yanwu; Zhu, Chaofu; Ruoff, Rodney S. Source: Applied Physics Letters, v 97, n 5, August 2, 2010 Database: Compendex 67. Strong circular photogalvanic effect in ZnO epitaxial films Zhang, Q. (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China); Wang, X.Q.; Yin, C.M.; Xu, F.J.; Tang, N.; Shen, B.; Chen, Y.H.; Chang, K.; Ge, W.K.; Ishitani, Y.; Yoshikawa, A. Source: Applied Physics Letters, v 97, n 4, July 26, 2010 Database: Compendex 68. Long rectangle resonator 1550 nm AlGaInAs/InP lasers Wang, Shi-Jiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Huang, Yong-Zhen; Yang, Yue-De; Lin, Jian-Dong; Che, Kai-Jun; Xiao, Jin-Long; Du, Yun Source: Journal of the Optical Society of America B: Optical Physics, v 27, n 4, p 719-724, April 1, 2010 Database: Compendex 69. The fabrication of eight-channel DFB laser array using sampled gratings Zhu, Hongliang (Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Semiconductor Materials Science, Beijing 100083, China); Xu, Xiaodong; Wang, Huan; Kong, Duanhua; Liang, Song; Zhao, Lingjuan; Wang, Wei Source: IEEE Photonics Technology Letters, v 22, n 5, p 353-355, March 1, 2010 Database: Compendex 70. Analysis of coupled microcircular resonators coupled to a bus waveguide with high output efficiency Wang, Shi-Jiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Yang, Yue-De; Huang, Yong-Zhen Source: Optics Letters, v 35, n 12, p 1953-1955, June 15, 2010 Database: Compendex 71. Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3,4,9,10-tetracarboxylic dianhydride as hole injection layer Li, Linsen (Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, Beijing 100083, China); Guan, Min; Cao, Guohua; Li, Yiyang; Zeng, Yiping Source: Applied Physics A: Materials Science and Processing, v 99, n 1, p 251-254, April 2010 Database: Compendex 72. A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology Wang, Wei (State Key Laboratory for Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Huang, Beiju; Dong, Zan; Guo, Weilian; Chen, Hongda Source: Journal of Semiconductors, v 31, n 5, p 0550071-0550074, 2010 Database: Compendex 73. Study on microwave cyclotron resonance of high-mobility GaAs/Al0.35Ga0.65As two-dimensional electron gas Yang, Wei (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Luo, Hai-Hui; Qian, Xuan; Ji, Yang Source: Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, v 29, n 2, p 87-90+122, April 2010 Language: Chinese Database: Compendex 74. Broadband external cavity tunable quantum dot lasers with low injection current density Lv, X.Q. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Jin, P.; Wang, W.Y.; Wang, Z.G. Source: Optics Express, v 18, n 9, p 8916-8922, April 26, 2010 Database: Compendex 75. Optical properties and electrical bistability of CdS nanoparticles synthesized in dodecanethiol Tang, Aiwei (Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing JiaoTong University, Beijing 100044, China); Teng, Feng; Hou, Yanbing; Wang, Yongsheng; Tan, Furui; Qu, Shengchun; Wang, Zhanguo Source: Applied Physics Letters, v 96, n 16, April 19, 2010 Database: Compendex 76. Phase-locked ring-defect photonic crystal vertical-cavity surface-emitting laser Liu, Anjin (Nano-optoelectronics Laboratory, Institute of Semiconductors, CAS, Beijing 100083, China); Chen, Wei; Xing, Mingxin; Zhou, Wenjun; Qu, Hongwei; Zheng, Wanhua Source: Applied Physics Letters, v 96, n 15, April 12, 2010 Database: Compendex 77. Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures Zhao, Lei (Solar Cell Technology Group, Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Institute of Electrical Engineering, Beijing 100190, China); Diao, Hongwei; Zeng, Xiangbo; Zhou, Chunlan; Li, Hailing; Wang, Wenjing Source: Physica B: Condensed Matter, v 405, n 1, p 61-64, January 1, 2010 Database: Compendex 78. Optical bistability in a two-section InAs quantum-dot laser Liwen, Jiang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xiaoling, Ye; Xiaolong, Zhou; Peng, Jin; Xueqin, L¨¹; Zhanguo, Wang Source: Journal of Semiconductors, v 31, n 11, p 1140121-1140123, November 2010 Database: Compendex 79. Analysis of surface emitting distributed-feedback quantum cascade laser based on a surface-plasmon waveguide Wanhong, Guo (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Quanyong, Lu; Junqi, Liu; Wei, Zhang; Yuchao, Jiang; Lu, Li; Lijun, Wang; Fengqi, Liu; Zhanguo, Wang Source: Journal of Semiconductors, v 31, n 11, p 1140141-1140145, November 2010 Database: Compendex 80. Origin of flat-band voltage sharp roll-off in metal gate/high-k /ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks Zheng, X.H. (Department of Physics, Beihang University, Beijing 100191, China); Huang, A.P.; Xiao, Z.S.; Yang, Z.C.; Wang, M.; Zhang, X.W.; Wang, W.W.; Chu, Paul K. Source: Applied Physics Letters, v 97, n 13, September 27, 2010 Database: Compendex 81. Temperature relaxation and energy loss of hot carriers in graphene Dong, H.M. (Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China); Xu, W.; Tan, R.B. Source: Solid State Communications, v 150, n 37-38, p 1770-1773, 2010 Database: Compendex 82. Quantum well infrared photodetector simultaneously working in two atmospheric windows Huo, Y.H. (Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Ma, W.Q.; Zhang, Y.H.; Chen, L.H.; Shi, Y.L. Source: Applied Physics A: Materials Science and Processing, v 100, n 2, p 415-419, August 2010 Database: Compendex 83. Efficient 1.53 ¦Ìm emission and energy transfer in Si/Er-Si-O multilayer structure Zheng, J. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, No. A35, QingHua East Road, Chinese Academy of Sciences, Beijing 100083, People's Republic of China); Zuo, Y.H.; Wang, W.; Tao, Y.L.; Xue, C.L.; Cheng, B.W.; Wang, Q.M. Source: Materials Research Bulletin, 2010 Article in Press Database: Compendex 84. LD side-pumped high beam quality passive Q-switched and mode-locked Nd:YAG laser based on SESAM Zhang, L. (Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Guo, L.; Xiong, B.; Yan, X.; Sun, L.; Hou, W.; Lin, X.C.; Li, J.M. Source: Laser Physics, v 20, n 9, p 1798-1801, September 2010 Database: Compendex 85. Surface plasmon enhanced GaAs thin film solar cells Liu, Wen (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaodong; Li, Yueqiang; Geng, Zhaoxin; Yang, Fuhua; Li, Jinmin Source: Solar Energy Materials and Solar Cells, 2010 Article in Press Database: Compendex 86. First principles study of p-type doping in SiC nanowires: role of quantum effect Wang, Zhiguo (Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China); Xue, Shuwen; Li, Jingbo; Gao, Fei Source: Journal of Nanoparticle Research, p 1-6, 2010 Article in Press Database: Compendex 87. Research of tracking models based on SURF Bing, Zhigang (Tianjin University of Technology and Education, Tianjin 300222, China); Wang, Yongxia; Lu, Hailong; Cui, Shigang; Chen, Hongda Source: Proceedings - 2010 1st International Conference on Pervasive Computing, Signal Processing and Applications, PCSPA 2010, p 517-520, 2010, Proceedings - 2010 1st International Conference on Pervasive Computing, Signal Processing and Applications, PCSPA 2010 Database: Compendex 88. Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films Chen, L. (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yan, S.; Xu, P.F.; Lu, J.; Deng, J.J.; Ji, Y.; Wang, K.Y.; Zhao, J.H. Source: Journal of Magnetism and Magnetic Materials, v 322, n 21, p 3250-3254, 2010 Database: Compendex 89. Temperature characteristics of 980 nm high power vertical cavity surface emitting lasers He, Guo-Rong (Department of Electronic and Communication Technology, Shenzhen Institute of Information Technology, Shenzhen 518029, China); Shen, Wen-Juan; Wang, Qing; Zheng, Wan-Hua; Chen, Liang-Hui Source: Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, v 39, n 1, p 57-60, February 2010 Language: Chinese Database: Compendex 90. GaSb films grown by MBE on GaAs(001) substrates Hao, Rui-Ting (Education Ministry Key Lab. of Renewable Energy Advanced Materials and Manufacturing Technology, Institute of Solar Energy, Yunnan Normal University, Kunming 650092, China); Shen, Lan-Xian; Deng, Shu-Kang; Yang, Pei-Zhi; Tu, Jie-Lei; Liao, Hua; Xu, Ying-Qiang; Niu, Zhi-Chuan Source: Gongneng Cailiao/Journal of Functional Materials, v 41, n 4, p 734-736, April 2010 Language: Chinese Database: Compendex 91. Hydride vapor phase epitaxy growth of semipolar (1013) GaN on Patterned m -Plane sapphire Wei, T.B. (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Hu, Q.; Duan, R.F.; Wei, X.C.; Yang, J.K.; Wang, J.X.; Zeng, Y.P.; Wang, G.H.; Li, J.M. Source: Journal of the Electrochemical Society, v 157, n 7, p H721-H726, 2010 Database: Compendex 92. Effective recombination velocity of textured surfaces Xiong, Kanglin (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China); Lu, Shulong; Jiang, Desheng; Dong, Jianrong; Yang, Hui Source: Applied Physics Letters, v 96, n 19, 2010 Database: Compendex 93. Donor-donor binding in In2 O3: Engineering shallow donor levels Tang, Li-Ming (Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Microelectronics, Hunan University, Changsha 410082, China); Wang, Ling-Ling; Wang, Dan; Liu, Jian-Zhe; Chen, Ke-Qiu Source: Journal of Applied Physics, v 107, n 8, April 15, 2010 Database: Compendex 94. Two-port InGaAsP/InP square resonator microlasers Che, K.-J. (Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Beijing 100083, China); Lin, J.-D.; Huang, Y.-Z.; Yang, Y.-D.; Du, Y. Source: Electronics Letters, v 46, n 8, p 585-586, 2010 Database: Compendex 95. Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers Zheng, Zhongshan (Department of Physics, University of Jinan, Jinan 250022, China); Liu, Zhongli; Li, Ning; Li, Guohua; Zhang, Enxia Source: Journal of Semiconductors, v 31, n 2, 2010 Database: Compendex 96. Superconductivity in Iron telluride thin films under tensile stress Han, Y. (National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China); Li, W.Y.; Cao, L.X.; Wang, X.Y.; Xu, B.; Zhao, B.R.; Guo, Y.Q.; Yang, J.L. Source: Physical Review Letters, v 104, n 1, January 8, 2010 Database: Compendex 97. Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas Li, Guodong (National Center for Nanoscience and Technology, 11 Beiyitiao, Zhongguancun, Beijing 100190, China); Yin, Hong; Zhu, Qinsheng; Sakaki, Hiroyuki; Jiang, Chao Source: Journal of Applied Physics, v 108, n 4, August 15, 2010 Database: Compendex 98. An efficient dose-compensation method for proximity effect correction Ying, Wang (Research Center of Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Weihua, Han; Xiang, Yang; Renping, Zhang; Yang, Zhang; Fuhua, Yang Source: Journal of Semiconductors, v 31, n 8, August 2010 Database: Compendex 99. The fabrication of GaN-based nanopillar light-emitting diodes Zhu, Jihong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Wang, Liangji; Zhang, Shuming; Wang, Hui; Zhao, Degang; Zhu, Jianjun; Liu, Zongshun; Jiang, Desheng; Yang, Hui Source: Journal of Applied Physics, v 108, n 7, October 1, 2010 Database: Compendex 100. A new discrimination method of maize seed varieties based on near-infrared spectroscopy Guo, Ting-Ting (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Shou-Jue; Wang, Hong-Wu; Hu, Hai-Xiao; An, Dong; Wu, Wen-Jin; Xia, Wei; Zhai, Ya-Feng Source: Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, v 30, n 9, p 2372-2376, September 2010 Language: Chinese Database: Compendex 101. Rashba electron's ballistic transport in two-dimensional quantum waveguide Liu, Duan-Yang (State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China); Xia, Jian-Bai Source: Journal of Applied Physics, v 108, n 5, September 1, 2010 Database: Compendex 102. Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector Cai, Li-E (Department of Physics, Laboratory of Micro/Nano Optoelectronics, Xiamen University, Xiamen 361005, China); Zhang, Bao-Ping; Zhang, Jiang-Yong; Wu, Chao-Min; Jiang, Fang; Hu, Xiao-Long; Chen, Ming; Wang, Qi-Ming Source: Physica E: Low-Dimensional Systems and Nanostructures, v 43, n 1, p 289-292, November 2010 Database: Compendex 103. Cost-effective, high-speed, silicon-based microring modulator integrated with grating couplers Xiao, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China); Zhu, Yu; Xu, Haihua; Yu, Yude; Yu, Jinzhong Source: Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010, p 516-517, 2010, Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010 Database: Compendex 104. Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers Hao, Ruiting (Educ. Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Institute of Solar Energy, Yunnan Normal University, Kunming, Yunnan Province, 650092, China); Deng, Shukang; Shen, Lanxian; Yang, Peizhi; Tu, Jielei; Liao, Hua; Xu, Yingqiang; Niu, Zhichuan Source: Thin Solid Films, v 519, n 1, p 228-230, 2010 Database: Compendex 105. Promotion effect of hydrogen on nanoindentation creep and recovery of nanoindentation in Ni50Mn30Ga20 ferromagnetic shape memory alloy Shen, Lian-Cheng (Corrosion and Protection Center, University of Science and Technology Beijing, Beijing 100083, China); Su, Yan-Jing; He, Jian-Ying; Li, Jin-Xu; Chu, Wu-Yang; Qiao, Li-Jie Source: Beijing Keji Daxue Xuebao/Journal of University of Science and Technology Beijing, v 32, n 10, p 1306-1310, October 2010 Language: Chinese Database: Compendex 106. Tandem organic light-emitting diodes with an effective charge-generation connection structure Li, Linsen (Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Guan, Min; Cao, Guohua; Li, Yiyang; Zeng, Yiping Source: Solid State Communications, v 150, n 35-36, p 1683-1685, 2010 Database: Compendex 107. Photoexcited charge current for the presence of pure spin current Liu, Yu (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chen, Yonghai; Wang, Zhanguo Source: Applied Physics Letters, v 96, n 26, June 28, 2010 Database: Compendex 108. Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence Xiong, Kanglin (Suzhou Institute of Nano-tech and Nano-bionics, CAS, Ruoshui Road 398, Suzhou 215125, China); He, Wei; Lu, Shulong; Zhou, Taofei; Jiang, Desheng; Wang, Rongxin; Qiu, Kai; Dong, Jianrong; Yang, Hui Source: Journal of Applied Physics, v 107, n 12, June 15, 2010 Database: Compendex 109. Low power CMOS preamplifier for neural recording applications Zhang, Xu (State Key Laboratory for Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Pei, Weihua; Huang, Beiju; Chen, Hongda Source: Journal of Semiconductors, v 31, n 4, 2010 Database: Compendex 110. Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m -plane ZnMgO thin films Yang, A.L. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Song, H.P.; Liang, D.C.; Wei, H.Y.; Liu, X.L.; Jin, P.; Qin, X.B.; Yang, S.Y.; Zhu, Q.S.; Wang, Z.G. Source: Applied Physics Letters, v 96, n 15, April 12, 2010 Database: Compendex 111. A study of indium incorporation in In-rich InGaN grown by MOVPE Guo, Y. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Tingshua East Road, No. 35, Beijing, 100083, China); Liu, X.L.; Song, H.P.; Yang, A.L.; Xu, X.Q.; Zheng, G.L.; Wei, H.Y.; Yang, S.Y.; Zhu, Q.S.; Wang, Z.G. Source: Applied Surface Science, v 256, n 10, p 3352-3356, March 1, 2010 Database: Compendex 112. Ferromagnetic modification of GaN film by Cu+ ions implantation Zhang, B. (Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai, 200433, China); Chen, C.C.; Yang, C.; Wang, J.Z.; Shi, L.Q.; Cheng, H.S.; Zhao, D.G. Source: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, v 268, n 2, p 123-126, January 15, 2010 Database: Compendex 113. Zinc oxide:aluminum films as back reflector in amorphous silicon solar cells Xiao, Haibo (Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China); Zeng, Xiangbo; Liu, Shiyong; Peng, Wenbo; Shi, Mingji; Zhang, Changsha Source: Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society, v 38, n 1, p 46-49, January 2010 Language: Chinese Database: Compendex 114. Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density Zhou, X.L. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Chen, Y.H.; Jia, C.H.; Ye, X.L.; Xu, Bo; Wang, Z.G. Source: Journal of Physics D: Applied Physics, v 43, n 48, December 8, 2010 Database: Compendex 115. Design of photonic crystal semiconductor optical amplifier with polarization independence Zhang, Yejin (Nano-Optoelectronic Lab, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China); Zheng, Wanhua; Aiyi, Qi; Qu, Hongwei; Peng, Hongling; Xie, Shizhong; Chen, Lianghui Source: Journal of Lightwave Technology, v 28, n 22, p 3207-3211, 2010 Database: Compendex 116. Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy Lan, Rao (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Guofeng, Song; Lianghui, Chen Source: Journal of Semiconductors, v 31, n 10, October 2010 Database: Compendex 117. Degree of fourth-order coherence by double Hanbury Brown-Twiss detections Zhang, Yu-Chi (State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China); Li, Yuan; Guo, Yan-Qiang; Li, Gang; Wang, Jun-Min; Zhang, Tian-Cai Source: Chinese Physics B, v 19, n 8, August 2010 Database: Compendex 118. Strain effects on optical polarisation properties in (1122) plane GaN films Hao, Guo-Dong (Nano-Devices and Materials Division, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China); Chen, Yong-Hai; Fan, Ya-Ming; Huang, Xiao-Hui; Wang, Huai-Bing Source: Chinese Physics B, v 19, n 11, November 2010 Database: Compendex 119. High-power, high-repetition-rate mid-infrared generation with PE-SRO based on a fan-out periodically poled MgO-doped lithium niobate Xiong, Bo (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Ma, Jian-Li; Chen, Ran; Wang, Bao-Hua; Cui, Qian-Jin; Zhang, Ling; Guo, Lin; Hou, Wei; Lin, Xue-Chun; Li, Jin-Min Source: Optics Communications, 2010 Article in Press Database: Compendex 120. Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors Lin, L. (National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China); Zhen, H.L.; Li, N.; Lu, W.; Weng, Q.C.; Xiong, D.Y.; Liu, F.Q. Source: Applied Physics Letters, v 97, n 19, November 8, 2010 Database: Compendex 121. Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy Wang, Jun (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Liu, Xiang-Lin; Yang, An-Li; Zheng, Gao-Lin; Yang, Shao-Yan; Wei, Hong-Yuan; Zhu, Qin-Sheng; Wang, Zhan-Guo Source: Applied Physics A: Materials Science and Processing, p 1-5, 2010 Article in Press Database: Compendex 122. QRD-M detector for STBC-VBLAST Jian, Hai-Fang (Institute of Semiconductors of Chinese Academy of Sciences, Haidian, Beijing 100083, China); Hu, Dong-Wei; Xiao, Wan-Ang; Shi, Yin Source: Dianzi Keji Daxue Xuebao/Journal of the University of Electronic Science and Technology of China, v 39, n 6, p 940-943, November 2010 Language: Chinese Database: Compendex 123. The mode characteristics of Photonic crystal vertical cavity surface emitting laser Xie, Yi Yang (Key Laboratory of Opt-electronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124, China); Xu, Chen; Kan, Qiang; Wang, Chun Xia; Wang, Bao Qiang; Liu, Ying Ming; Chen, Hong Da; Shen, Guang Di Source: Proceedings of SPIE - The International Society for Optical Engineering, v 7657, 2010, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems Database: Compendex 124. Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application Zhang, Jiayong (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaofeng; Wang, Xiaodong; Ma, Huili; Cheng, Kaifang; Fan, Zhongchao; Li, Yan; Ji, An; Yang, Fuhua Source: Applied Physics Letters, v 96, n 21, May 24, 2010 Database: Compendex 125. Mode simulation for midinfrared microsquare resonators with sloped sidewalls and confined metals Li, Jing (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yang, Yue-De; Huang, Yong-Zhen Source: IEEE Photonics Technology Letters, v 22, n 7, p 459-461, April 1, 2010 Database: Compendex 126. Frequency and wavelength tunable optical microwave source based on a distributed Bragg reflector self-pulsation laser Liu, Yang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Sun, Yu; Kong, Duanhua; Wang, Baojun; Bian, Jing; An, Xin; Zhao, Lingjuan; Wang, Wei Source: Journal of Semiconductors, v 31, n 6, 2010 Database: Compendex 127. A selective-area metal bonding InGaAsP-Si laser Hong, Tao (State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China); Ran, Guang-Zhao; Chen, Ting; Pan, Jiao-Qing; Chen, Wei-Xi; Wang, Yang; Cheng, Yuan-Bing; Liang, Song; Zhao, Ling-Juan; Yin, Lu-Qiao; Zhang, Jian-Hua; Wang, Wei; Qin, Guo-Gang Source: IEEE Photonics Technology Letters, v 22, n 15, p 1141-1143, 2010 Database: Compendex 128. Incident angle dependence of GaAs/AlGaAs multiple quantum well spatial light modulators Huang, Yu-Yang (Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China); Liu, Hui-Chun; Wasilewski, Z.R.; Buchanan, M.; Laframboise, S.R.; Yang, Chen; Cui, Guo-Xin; Bian, Li-Feng; Yang, Hui; Zhang, Yao-Hui Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 5, p 668-671, May 2010 Language: Chinese Database: Compendex 129. Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer Zhang, Chong (State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China); Ye, Hui; Zhang, Lei; Huangfu, Yourui; Liu, Xu; Yu, Jinzhong Source: Chinese Optics Letters, v 8, n SUPPL., p 91-93, April 2010 Database: Compendex 130. Investigation of mode radiation loss for microdisk resonators with pedestals by FDTD technique Yang, Yuede (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Shijiang; Huang, Yongzhen Source: Chinese Optics Letters, v 8, n 5, p 502-504, May 2010 Database: Compendex 131. Kondo effect in a triangular triple quantum dots ring with three terminals Liu, Yu (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Chen, Yonghai; Wang, Zhanguo Source: Solid State Communications, v 150, n 25-26, p 1136-1140, July 2010 Database: Compendex 132. Fast discrimination of commerical corn varieties based on near infrared spectra Wu, Wen-Jin (College of Information and Electrical Engineering, China Agricultural University, Beijing 100083, China); Wang, Hong-Wu; Chen, Shao-Jiang; Guo, Ting-Ting; Wang, Shou-Jue; Su, Qian; Sun, Ming; An, Dong Source: Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, v 30, n 5, p 1248-1251, May 2010 Language: Chinese Database: Compendex 133. Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure You, J.B. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083, China); Zhang, X.W.; Zhang, S.G.; Tan, H.R.; Ying, J.; Yin, Z.G.; Zhu, Q.S.; Chu, Paul K. Source: Journal of Applied Physics, v 107, n 8, April 15, 2010 Database: Compendex 134. Rashba electron transport in 1D quantum waveguides Liu, DuanYang (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Beijing 100083, China); Xia, JianBai; Chang, YiaChung Source: INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, p 26, 2010, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings Database: Compendex 135. Influence of ZnS and MgO shell on the photoluminescence properties of ZnO core/shell nanowires Meng, X.Q. (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Peng, Haowei; Gai, Y.Q.; Li, Jingbo Source: Journal of Physical Chemistry C, v 114, n 3, p 1467-1471, January 28, 2010 Database: Compendex 136. A 2.4 GHz power amplifier in 0.35 ¦Ìm SiGe BiCMOS Hao, Mingli (Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China); Shi, Yin Source: Journal of Semiconductors, v 31, n 1, 2010 Database: Compendex 137. Fabrication of a Si nanowire arrayed waveguide grating Zhang, Jia-Shun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); An, Jun-Ming; Zhao, Lei; Song, Shi-Jiao; Wu, Yuan-Da; Hu, Xiong-Wei Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 10, p 1431-1434, October 2010 Language: Chinese Database: Compendex 138. Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition Zhu, B.L. (Department of Metal Materials Engineering, School of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China); Zhao, X.Z.; Su, F.H.; Li, G.H.; Wu, X.G.; Wu, J.; Wu, R. Source: Vacuum, v 84, n 11, p 1280-1286, 2010 Database: Compendex 139. Magnetic properties of full-Heusler alloy Co2 Fe1-x Mnx Al films grown by molecular-beam epitaxy Meng, K.K. (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Wang, S.L.; Xu, P.F.; Chen, L.; Yan, W.S.; Zhao, J.H. Source: Applied Physics Letters, v 97, n 23, December 6, 2010 Database: Compendex 140. Magnetic anisotropies of laterally confined structures of epitaxial Fe films on GaAs (001) Meng, K.K. (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Lu, J.; Wang, S.L.; Meng, H.J.; Zhao, J.H.; Misuraca, J.; Xiong, P.; Von Moln¨¢r, S. Source: Applied Physics Letters, v 97, n 7, August 16, 2010 Database: Compendex 141. Organic/inorganic hybrid solar cells based on SnS/SnO nanocrystals and MDMO-PPV Wang, Zhijie (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Qu, Shengchun; Zeng, Xiangbo; Liu, Junpeng; Tan, Furui; Bi, Yu; Wang, Zhanguo Source: Acta Materialia, v 58, n 15, p 4950-4955, September 2010 Database: Compendex 142. High-saturation-power and high-speed Ge-on-SOI p-i-n photodetectors Xue, Hai-Yun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xue, Chun-Lai; Cheng, Bu-Wen; Yu, Yu-De; Wang, Qi-Ming Source: IEEE Electron Device Letters, v 31, n 7, p 701-703, July 2010 Database: Compendex 143. Residual impurities and electrical properties of undoped LEC InAs single crystals Weijie, Hu (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Youwen, Zhao; Wenrong, Sun; Manlong, Duan; Zhiyuan, Dong; Jun, Yang Source: Journal of Semiconductors, v 31, n 4, 2010 Database: Compendex 144. Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes You, J.B. (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083, China); Zhang, X.W.; Zhang, S.G.; Wang, J.X.; Yin, Z.G.; Tan, H.R.; Zhang, W.J.; Chu, P.K.; Cui, B.; Wowchak, A.M.; Dabiran, A.M.; Chow, P.P. Source: Applied Physics Letters, v 96, n 20, May 17, 2010 Database: Compendex 145. Fermi-level pinning at metal/high-k interface influenced by electron state density of metal gate Yang, Z.C. (Department of Physics, Beihang University, Beijing 100191, China); Huang, A.P.; Zheng, X.H.; Xiao, Z.S.; Liu, X.Y.; Zhang, X.W.; Chu, Paul K.; Wang, W.W. Source: IEEE Electron Device Letters, v 31, n 10, p 1101-1103, October 2010 Database: Compendex 146. Internal quantum efficiency analysis of solar cell by genetic algorithm Xiong, Kanglin (Institute of Semiconductors, CAS, No. A35, Qing Hua East Road, Beijing 100083, China); Lu, Shulong; Zhou, Taofei; Jiang, Desheng; Wang, Rongxin; Qiu, Kai; Dong, Jianrong; Yang, Hui Source: Solar Energy, v 84, n 11, p 1888-1891, November 2010 Database: Compendex 147. Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters Song, Yafeng (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Lu, Yanwu; Zhang, Biao; Xu, Xiaoqing; Wang, Jun; Guo, Yan; Shi, Kai; Li, Zhiwei; Liu, Xianglin; Yang, Shaoyan; Zhu, Qinsheng; Wang, Zhanguo Source: Journal of Applied Physics, v 108, n 8, October 15, 2010 Database: Compendex 148. Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model Guoyu, Li (Institute of Microelectronics, Tsinghua University, Beijing 100084, China); Yejin, Zhang; Xiaojian, Li; Lilin, Tian Source: Journal of Semiconductors, v 31, n 10, October 2010 Database: Compendex 149. Design and optimization of a monolithic GaInP/GaInAs tandem solar cell Han, Zhang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Nuofu, Chen; Yu, Wang; Zhigang, Yin; Xingwang, Zhang; Huiwei, Shi; Yanshuo, Wang; Tianmao, Huang Source: Journal of Semiconductors, v 31, n 8, August 2010 Database: Compendex 150. Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots Gu, Yong-Xian (Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yang, Tao; Ji, Hai-Ming; Xu, Peng-Fei; Wang, Zhan-Guo Source: Chinese Physics B, v 19, n 8, August 2010 Database: Compendex 151. Analysis of mode characteristics for hexagonal resonator lasers Wu, Wen-guang (College of Information Science and Engineering, Huaqiao University, Quanzhou 362021, China); Wang, Jia-xian; Huang, Yong-zhen Source: Optoelectronics Letters, v 6, n 4, p 256-260, 2010 Database: Compendex 152. A Ga-doped ZnO transparent conduct layer for GaN-based LEDs Zhen, Liu (Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xiaofeng, Wang; Hua, Yang; Yao, Duan; Yiping, Zeng Source: Journal of Semiconductors, v 31, n 9, September 2010 Database: Compendex 153. A low power fast-settling frequency-presetting PLL frequency synthesizer Zhiqing, Geng (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xiaozhou, Yan; Wenfeng, Lou; Peng, Fen; Nanjian, Wu Source: Journal of Semiconductors, v 31, n 8, August 2010 Database: Compendex 154. Low-power switched-capacitor delta-sigma modulator for EEG recording applications Chen, Jin (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Xu; Chen, Hongda Source: Journal of Semiconductors, v 31, n 7, July 2010 Database: Compendex 155. A novel RFID tag chip with temperature sensor in standard CMOS process Zhang, Qi (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Feng, Peng; Zhou, Shenghua; Geng, Zhiqing; Wu, Nanjian Source: ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, p 1109-1112, 2010, ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems Database: Compendex 156. VCSEL transverses mode control by 2D photonic crystal Xie, Yi-Yang (Beijing Laboratory of Optoelectronic Technology, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China); Xu, Chen; Kan, Qiang; Wang, Chun-Xia; Wang, Bao-Qiang; Liu, Ying-Ming; Chen, Hong-Da; Shen, Guang-Di Source: Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, v 39, n 3, p 460-463, June 2010 Language: Chinese Database: Compendex 157. Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy Zheng, Gaolin (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Wang, Jun; Liu, Xianglin; Yang, Anli; Song, Huaping; Guo, Yan; Wei, Hongyuan; Jiao, Chunmei; Yang, Shaoyan; Zhu, Qinsheng; Wang, Zhanguo Source: Applied Surface Science, v 256, n 23, p 7327-7330, 2010 Database: Compendex 158. In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy Yu, J.L. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, Y.H.; Ye, X.L.; Jiang, C.Y.; Jia, C.H. Source: Journal of Applied Physics, v 108, n 1, July 1, 2010 Database: Compendex 159. Dispersion characteristics of nanometer-scaled silicon rib waveguides Jia, Lianxi (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Geng, Minming; Zhang, Lei; Yang, Lin; Chen, Ping; Liu, Yuliang Source: Chinese Optics Letters, v 8, n 5, p 485-489, May 2010 Database: Compendex 160. Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating Cao, Yu-Lian (Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yang, Tao; Xu, Peng-Fei; Ji, Hai-Ming; Gu, Yong-Xian; Wang, Xiao-Dong; Wang, Qing; Ma, Wen-Quan; Chen, Liang-Hui Source: Applied Physics Letters, v 96, n 17, April 26, 2010 Database: Compendex 161. Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition Wu, Chaomin (Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China); Shang, Jingzhi; Zhang, Baoping; Zhang, Jiangyong; Yu, Jinzhong; Wang, Qiming Source: Science China Technological Sciences, v 53, n 2, p 313-316, February 2010 Database: Compendex 162. Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method Sun, Lili (Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Liu, Chao; Li, Jianming; Wang, Junxi; Yan, Fawang; Zeng, Yiping; Li, Jinmin Source: Materials Letters, v 64, n 9, p 1031-1033, May 15, 2010 Database: Compendex 163. Structural and optical properties of Al1-x InxN epilayers on GaN template grown by metalorganic chemical vapor deposition Guo-Jun, Lu (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Jian-Jun, Zhu; De-Sheng, Jiang; Yu-Tian, Wang; De-Gang, Zhao; Zong-Shun, Liu; Shu-Ming, Zhang; Hui, Yang Source: Chinese Physics B, v 19, n 2, 2010 Database: Compendex 164. Structure and properties of InAs/AlAs quantum dots for broadband emission Meng, X.Q. (Key Laboratory of Artificial Micro- and Nano-structures, Wuhan University, Ministry of Education, Wuhan 430072, China); Jin, P.; Liang, Z.M.; Liu, F.Q.; Wang, Z.G.; Zhang, Z.Y. Source: Journal of Applied Physics, v 108, n 10, November 15, 2010 Database: Compendex 165. Blue-shift photoluminescence from porous InAlAs Jiang, Y.C. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, F.Q.; Wang, L.J.; Yin, W.; Wang, Z.G. Source: Semiconductor Science and Technology, v 25, n 11, November 2010 Database: Compendex 166. Investigation on multiple-port microcylinder lasers based on coupled modes Huang, Yong-Zhen (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Wang, Shi-Jiang; Yang, Yue-De; Lin, Jian-Dong; Che, Kai-Jun; Xiao, Jin-Long; Du, Yun Source: Semiconductor Science and Technology, v 25, n 10, October 2010 Database: Compendex 167. Single-frequency Nd:YAG ring laser Zhao, Weifang (Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China); Hou, Wei; Li, Gang; Lin, Xuechun; Li, Jinmin Source: Zhongguo Jiguang/Chinese Journal of Lasers, v 37, n 11, p 2810-2812, November 2010 Language: Chinese Database: Compendex 168. Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction Guo, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Yu-Tian; Zhao, De-Gang; Jiang, De-Sheng; Zhu, Jian-Jun; Liu, Zong-Shun; Wang, Hui; Zhang, Shu-Ming; Qiu, Yong-Xin; Xu, Ke; Yang, Hui Source: Chinese Physics B, v 19, n 7, July 201s0 2010 Database: Compendex 169. Influence of interface modification on the performance of polymer/Bi 2S3 nanorods bulk heterojunction solar cells Wang, Zhijie (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Qu, Shengchun; Zeng, Xiangbo; Liu, Junpeng; Tan, Furui; Jin, Lan; Wang, Zhanguo Source: Applied Surface Science, v 257, n 2, p 423-428, 2010 Database: Compendex 170. Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates Sun, Guo-Sheng (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Xing-Fang; Wang, Lei; Zhao, Wan-Shun; Yang, Ting; Wu, Hai-Lei; Yan, Guo-Guo; Zhao, Yong-Mei; Ning, Jin; Zeng, Yi-Ping; Li, Jin-Min Source: Chinese Physics B, v 19, n 8, August 2010 Database: Compendex 171. Influence of the output facets reflection on the properties of sampled grating DBR lasers Liu, Yang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Pan, Jiao-Qing; Wang, Bao-Jun; Bian, Jing; An, Xin; Zhao, Ling-Juan Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 11, p 1635-1637, November 2010 Language: Chinese Database: Compendex 172. Band structures of graphene hexagonal lattice semiconductor quantum dots Peng, Juan (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Shu-Shen Source: Applied Physics Letters, v 97, n 24, December 13, 2010 Database: Compendex 173. A 20.1 W solid-state laser pumped by 887 nm with high efficiency and TEM00 mode1 Ma, J. (Changchun University of Science and Technology, Changchun, 130022, China); Guo, L.; Xiong, B.; Yan, X.; Zhang, S.; Chen, R.; Zhao, W.; Lin, X.; Li, J.; Duanmu, Q. Source: Laser Physics, v 20, n 6, p 1350-1353, June 2010 Database: Compendex 174. Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density Zhou, X.L. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, Y.H.; Liu, J.Q.; Xu, B.; Ye, X.L.; Wang, Z.G. Source: Physica E: Low-Dimensional Systems and Nanostructures, v 42, n 9, p 2455-2459, 2010 Database: Compendex 175. Antibunching and blinking from a single colloidal CdSe quantum dot Xu, Xingsheng (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chen, Shuai; Yamada, Toshiki Source: Science China: Physics, Mechanics and Astronomy, v 53, n 9, p 1619-1625, September 2010 Database: Compendex 176. Design and analysis of a forked n-well and p-sub junction Si LED based on standard CMOS technology Yang, Guang-Hua (Electronics and Information School, Tianjin University, Tianjin 300072, China); Mao, Lu-Hong; Huang, Chun-Hong; Wang, Wei; Guo, Wei-Lian Source: Faguang Xuebao/Chinese Journal of Luminescence, v 31, n 3, p 369-372, June 2010 Language: Chinese Database: Compendex 177. Near-field optical test of the nanohole with subwavelength structure Li, Hai-Jun (Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou 215125, China); Shi, Wen-Hua; Zha, Qiang; Wang, Yuan; Wang, Yi-Qun; Xing, Zheng; Zhang, Bao-Shun Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 7, p 963-965, July 2010 Language: Chinese Database: Compendex 178. Fabrication of a novel silica PLC hybrid integrated triplexer Li, Junyi (Optoelectronics Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); An, Junming; Wu, Yuanda; Li, Jianguang; Wang, Hongjie; Hu, Xiongwei Source: Chinese Optics Letters, v 8, n 6, p 588-590, June 2010 Database: Compendex 179. Spin injection in the multiple quantum-well LED structure with the Fe/AlO x injector Hao, Wu (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Houzhi, Zheng; Jian, L.I.U.; Guirong, L.I.; Ping, X.U.; Hui, Zhu; Hao, Zhang; Jianhua, Zhao Source: Science China: Physics, Mechanics and Astronomy, v 53, n 4, p 649-653, April 2010 Database: Compendex 180. Quantum confinement effects and electronic properties of SnO2 quantum wires and dots Deng, Hui-Xiong (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Shu-Shen; Li, Jingbo Source: Journal of Physical Chemistry C, v 114, n 11, p 4841-4845, March 25, 2010 Database: Compendex 181. Multimode resonances in metallically confined square-resonator microlasers Che, Kai-Jun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yang, Yue-De; Huang, Yong-Zhen Source: Applied Physics Letters, v 96, n 5, 2010 Database: Compendex 182. Analysis on the high luminous flux white light from GaN-based laser diode Xu, Y. (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Hu, H.; Chen, L.; Song, G.; Zhuang, W. Source: Applied Physics B: Lasers and Optics, v 98, n 1, p 83-86, January 2010 Database: Compendex 183. The study of distributed feedback laser arrays based on sampled gratings Zhu, Hong-Liang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xu, Xiao-Dong; Wang, Huan; Kong, Duan-Hua; Liang, Song; Wang, Bao-Jun; Zhao, Ling-Juan; Wang, Wei Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 9, p 1280-1282, September 2010 Language: Chinese Database: Compendex 184. A direct-conversion WLAN transceiver baseband with DC offset compensation and carrier leakage reduction Fang, Yuan (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Jun, Yan; Heping, Ma; Yin, Shi; Foster, Dai Fa Source: Journal of Semiconductors, v 31, n 10, October 2010 Database: Compendex 185. Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk Xiao, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xu, Haihua; Zhou, Liang; Li, Zhiyong; Li, Yuntao; Yu, Yude; Yu, Jinzhong Source: Chinese Optics Letters, v 8, n 8, p 757-760, August 2010 Database: Compendex 186. Study on tapered crossed subwavelength gratings by Fourier modal method Chen, Xi (Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhong, Yuan; Wang, Qing; Zhang, Ye-Jin; Chen, Liang-Hui Source: Chinese Physics B, v 19, n 10, October 2010 Database: Compendex 187. In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate Wang, Y. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Jiang, Y.; Zhang, X.W.; Yin, Z.G. Source: Journal of Applied Physics, v 108, n 7, October 1, 2010 Database: Compendex 188. Optical properties of UO2 and PuO2 Shi, Hongliang (LCP, Institute of Applied Physics and Computational Mathematics, P.O. Box 8009, Beijing 100088, People's Republic of China); Chu, Mingfu; Zhang, Ping Source: Journal of Nuclear Materials, 2010 Article in Press Database: Compendex 189. Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods Li, Zhiwei (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Xu, Xiaoqing; Wang, Jun; Liu, Jianming; Liu, Xianglin; Yang, Shaoyan; Zhu, Qinsheng; Wang, Zhanguo Source: Physica E: Low-Dimensional Systems and Nanostructures, v 43, n 1, p 543-546, November 2010 Database: Compendex 190. A halo-free and hue preserving algorithm for color image enhancement Xiao, Quan (School of Information Science and Technology, Xiamen University, Xiamen 361005, China); Ding, Xinghao; Wang, Shoujue; Liao, Yinghao; Guo, Donghui Source: Jisuanji Fuzhu Sheji Yu Tuxingxue Xuebao/Journal of Computer-Aided Design and Computer Graphics, v 22, n 8, p 1246-1252, August 2010 Language: Chinese Database: Compendex 191. All-optical clock recovery using a ridge width varied two-section partly gain-coupled DFB self-pulsation laser Kong, D.H. (Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhu, H.L.; Liang, S.; Zhao, X.F.; Lou, C.X.; Wang, L.; Wang, B.J.; Zhao, L.J. Source: Optics Communications, v 283, n 20, p 3970-3975, 2010 Database: Compendex 192. Performance of an embedded optical vector matrix multiplication processor architecture Yang, C. (Institute of Semiconductors, CAS. No. A35, QingHua East Road, Haidian District, Beijing 100083, China); Cui, G.X.; Huang, Y.Y.; Wu, L.; Yang, H.; Zhang, Y.H. Source: IET Optoelectronics, v 4, n 4, p 159-164, August 2010 Database: Compendex 193. Demonstration of directed XOR/XNOR logic gates using two cascaded microring resonators Zhang, Lei (Optoelectrinic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Ji, Ruiqiang; Jia, Lianxi; Yang, Lin; Zhou, Ping; Tian, Yonghui; Chen, Ping; Lu, Yangyang; Jiang, Zhenyu; Liu, Yuliang; Fang, Qing; Yu, Mingbin Source: Optics Letters, v 35, n 10, p 1620-1622, May 15, 2010 Database: Compendex 194. Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density Zhou, X.L. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Chen, Y.H.; Liu, J.Q.; Jia, C.H.; Zhou, G.Y.; Ye, X.L.; Xu, Bo; Wang, Z.G. Source: Journal of Physics D: Applied Physics, v 43, n 29, 2010 Database: Compendex 195. Ultracompact triplexer by coupling and decoupling of multiple photonic crystal waveguides He, Lingjuan (Department of Physics, Nanchang University, 330031, China); Xu, Xuming; Liu, Nianhua; Yu, Tianbao; Fang, Liguang Source: Journal of Optics, v 12, n 6, 2010 Database: Compendex 196. Observation of N-shaped negative differential resistance in GaAs-based modulation-doped field effect transistor with InAs quantum dots Li, Yueqiang (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaodong; Xu, Xiaona; Liu, Wen; Chen, Yanling; Yang, Fuhua; Tan, Pingheng; Zeng, Yiping Source: Japanese Journal of Applied Physics, v 49, n 10, p 1040021-1040025, October 2010 Database: Compendex 197. Microphotoluminescence investigation of InAs quantum dot active region in 1.3 ¦Ìm vertical cavity surface emitting laser structure Ding, Y. (School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore); Fan, W.J.; Ma, B.S.; Xu, D.W.; Yoon, S.F.; Liang, S.; Zhao, L.J.; Wasiak, M.; Czyszanowski, T.; Nakwaski, W. Source: Journal of Applied Physics, v 108, n 7, October 1, 2010 Database: Compendex 198. Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques Guo, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Hui; Jiang, De-Sheng; Wang, Yu-Tian; Zhao, De-Gang; Zhu, Jian-Jun; Liu, Zong-Shun; Zhang, Shu-Ming; Yang, Hui Source: Chinese Physics B, v 19, n 10, October 2010 Database: Compendex 199. Research of tracking robot based on SURF features Bing, Zhigang (Tianjin University of Technology and Education, Tianjin 300222, China); Wang, Yongxia; Hou, Jinsheng; Lu, Hailong; Chen, Hongda Source: Proceedings - 2010 6th International Conference on Natural Computation, ICNC 2010, v 7, p 3523-3527, 2010, Proceedings - 2010 6th International Conference on Natural Computation, ICNC 2010 Database: Compendex 200. Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators Zhang, Yun-Xiao (Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liao, Zai-Yi; Zhao, Ling-Juan; Pan, Jiao-Qing; Zhu, Hong-Liang; Wang, Wei Source: Chinese Physics B, v 19, n 7, July 2010 Database: Compendex 201. Fast simultaneous measurement of multi-gases using quantum cascade laser photoacoustic spectroscopy Liu, W. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Wang, L.; Li, L.; Liu, J.; Liu, F.-Q.; Wang, Z. Source: Applied Physics B: Lasers and Optics, p 1-5, 2010 Article in Press Database: Compendex 202. The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses Hu, Xiao-Long (Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, China); Zhang, Jiang-Yong; Shang, Jing-Zhi; Liu, Wen-Jie; Zhang, Bao-Ping Source: Chinese Physics B, v 19, n 11, November 2010 Database: Compendex 203. Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer Li, Tianfeng (Key Laboratory of Semiconductor Material Science, Institute of semiconductors, Chinese Academy of Science, Beijing 100083, PR China); Chen, Yonghai; Lei, Wen; Zhou, Xiaolong; Wang, Zhanguo Source: Physica E: Low-Dimensional Systems and Nanostructures, 2010 Article in Press Database: Compendex 204. Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN Jiang, Fang (Laboratory of Micro/Nano Optoelectronics, Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, China); Cai, Li-E; Zhang, Jiang-Yong; Zhang, Bao-Ping Source: Physica E: Low-Dimensional Systems and Nanostructures, v 42, n 9, p 2420-2423, 2010 Database: Compendex 205. Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy Jia, C.H. (Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083, China); Chen, Y.H.; Zhou, X.L.; Yang, A.L.; Zheng, G.L.; Liu, X.L.; Yang, S.Y.; Wang, Z.G. Source: Applied Physics A: Materials Science and Processing, v 99, n 2, p 511-514, May 2010 Database: Compendex 206. Effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films: Identification of hydrogen donors in ZnO Dong, J.J. (Key Lab. of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China); Zhang, X.W.; You, J.B.; Cai, P.F.; Yin, Z.G.; An, Q.; Ma, X.B.; Jin, P.; Wang, Z.G.; Chu, Paul K. Source: ACS Applied Materials and Interfaces, v 2, n 6, p 1780-1784, June 23, 2010 Database: Compendex 207. Electrical and optical phase transition properties of nano vanadium dioxide thin films Liang, Ji-Ran (College of Electronic Science and Technology, School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China); Hu, Ming; Wang, Xiao-Dong; Li, Gui-Ke; Kan, Qiang; Ji, An; Yang, Fu-Hua; Liu, Jian; Wu, Nan-Jian; Chen, Hong-Da Source: Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, v 30, n 4, p 1002-1007, April 2010 Language: Chinese Database: Compendex 208. Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer Wu, Yu-Xin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhu, Jian-Jun; Chen, Gui-Feng; Zhang, Shu-Ming; Jiang, De-Sheng; Liu, Zong-Shun; Zhao, De-Gang; Wang, Hui; Wang, Yu-Tian; Yang, Hui Source: Chinese Physics B, v 19, n 3, 2010 Database: Compendex 209. High efficiency and broad bandwidth grating coupler between nanophotonic waveguide and fibre Zhu, Yu (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xu, Xue-Jun; Li, Zhi-Yong; Zhou, Liang; Han, Wei-Hua; Fan, Zhong-Chao; Yu, Yu-De; Yu, Jin-Zhong Source: Chinese Physics B, v 19, n 1, 2010 Database: Compendex 210. Disentangling mechanical and mass effects on nanomechanical resonators Gr¨¹ter, R.R. (Departments of Physics, Chemistry and Medicine, London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United Kingdom); Khan, Z.; Paxman, R.; Ndieyira, J.W.; Dueck, B.; Bircher, B.A.; Yang, J.L.; Drechsler, U.; Despont, M.; McKendry, R.A.; Hoogenboom, B.W. Source: Applied Physics Letters, v 96, n 2, 2010 Database: Compendex 211. Catalytic activation of Mg-doped GaN by hydrogen desorption using different metal thin layers Wei, Tongbo (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Junxi; Liu, Naixin; Lu, Hongxi; Zeng, Yiping; Wang, Guohong; Li, Jinmin Source: Japanese Journal of Applied Physics, v 49, n 10, p 1002011-1002013, October 2010 Database: Compendex 212. Light-splitting photovoltaic system utilizing two dual-junction solar cells Xiong, Kanglin (Suzhou Institute of Nano-tech and Nano-bionics, CAS, Ruoshui Road 398, Suzhou 215125, China); Lu, Shulong; Dong, Jianrong; Zhou, Taofei; Jiang, Desheng; Wang, Rongxin; Yang, Hui Source: Solar Energy, v 84, n 12, p 1975-1978, December 2010 Database: Compendex 213. Quantum tunneling through planar p-n junctions in HgTe quantum wells Zhang, L.B. (SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Chang, Kai; Xie, X.C.; Buhmann, H.; Molenkamp, L.W. Source: New Journal of Physics, v 12, August 27, 2010 Database: Compendex 214. Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties Wang, H. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Jiang, D.S.; Jahn, U.; Zhu, J.J.; Zhao, D.G.; Liu, Z.S.; Zhang, S.M.; Qiu, Y.X.; Yang, H. Source: Physica B: Condensed Matter, v 405, n 22, p 4668-4672, 2010 Database: Compendex 215. A low power automatic gain control loop for a receiver Guofeng, Li (State Key Laboratory for Super lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhiqing, Geng; Nanjian, Wu Source: Journal of Semiconductors, v 31, n 9, September 2010 Database: Compendex 216. Carrier generation and if signal up-conversion using optical injection locking and stimulated Brillouin scattering Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhu, Ning Hua; Wang, Li Xian; Liu, Jian Guo; Qi, Xiao Qiong; Xie, Liang Source: Optics Communications, v 283, n 24, p 5207-5212, 2010 Database: Compendex 217. Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell Shang, X.J. (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); He, J.F.; Wang, H.L.; Li, M.F.; Zhu, Y.; Niu, Z.C.; Fu, Y. Source: Applied Physics A: Materials Science and Processing, p 1-7, 2010 Article in Press Database: Compendex 218. Quantifying the effectiveness of SiO2/Au light trapping nanoshells for thin film poly-Si solar cells Bai, Yiming (School of Renewable Energy Engineering, North China Electric Power University, Beijing 102206, China); Wang, Jun; Chen, Nuofu; Yao, Jianxi; Yin, Zhigang; Zhang, Han; Zhang, Xingwang; Huang, Tianmao; Wang, Yanshuo; Yang, Xiaoli Source: Science China Technological Sciences, v 53, n 8, p 2228-2231, August 2010 Database: Compendex 219. Co doping enhanced giant magnetocaloric effect in Mn1-xCo xAs films epitaxied on GaAs (001) Xu, P.F. (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Nie, S.H.; Meng, K.K.; Wang, S.L.; Chen, L.; Zhao, J.H. Source: Applied Physics Letters, v 97, n 4, July 26, 2010 Database: Compendex 220. An algorithm for retrieving soil moisture from AMSR-E passive microwave data Mao, Kebiao (Key Laboratory of Dryland Farming and Water-Saving Agriculture, Key Laboratory of Resources Remote Sensing and Digital Agriculture, Institute of Agricultural Resources and Regional Planning, Beijing 100081, China); Hu, Deyong; Huang, Jianxi; Zhang, Wu; Zhang, Lixin; Zou, Jingqiu; Tang, Huajun Source: Gaojishu Tongxin/Chinese High Technology Letters, v 20, n 6, p 651-659, June 2010 Language: Chinese Database: Compendex 221. Directional emission InGaAsP/InP mirocylinder lasers Wang, Shi-Jiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Huang, Yong-Zhen; Yang, Yue-De; Lin, Jian-Dong; Du, Yun Source: 2010 IEEE Photonics Society Winter Topicals Meeting Series, WTM 2010, p 137-138, 2010, 2010 IEEE Photonics Society Winter Topicals Meeting Series, WTM 2010 Database: Compendex 222. Tapered quantum cascade lasers operating at 9.0 ¦Ìm Yu, Gao (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Fengqi, Liu; Junqi, Liu; Lu, Li; Lijun, Wang; Zhanguo, Wang Source: Journal of Semiconductors, v 31, n 3, 2010 Database: Compendex 223. Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method Zheng, J. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Ding, W.C.; Xue, C.L.; Zuo, Y.H.; Cheng, B.W.; Yu, J.Z.; Wang, Q.M.; Wang, G.L.; Guo, H.Q. Source: Journal of Luminescence, v 130, n 3, p 411-414, March 2010 Database: Compendex 224. Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis Huang, Tianmao (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chen, Nuofu; Zhang, Xingwang; Bai, Yiming; Yin, Zhigang; Shi, Huiwei; Zhang, Han; Wang, Yu; Wang, Yanshuo; Yang, Xiaoli Source: Science China Technological Sciences, v 53, n 11, p 3002-3005, November 2010 Database: Compendex 225. Investigation on a pressure-gradient fiber laser hydrophone Zhang, Wentao (Optoelectronics System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing, 100083, China); Zhang, Faxiang; Li, Fang; Liu, Yuliang Source: Measurement Science and Technology, v 21, n 9, July 28, 2010, The 20th International Conference on Optical Fibre Sensors, OFS-20 Database: Compendex 226. One-pot synthesis and self-assembly of colloidal copper(I) sulfide nanocrystals Tang, Aiwei (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Qu, Shengchun; Li, Kai; Hou, Yanbing; Teng, Feng; Cao, Jie; Wang, Yongsheng; Wang, Zhanguo Source: Nanotechnology, v 21, n 28, 2010 Database: Compendex 227. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors Zhoa, De-Gang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Shuang; Liu, Wen-Bao; Hao, Xiao-Peng; Jiang, De-Sheng; Zhu, Jian-Jun; Liu, Zong-Shun; Wang, Hui; Zhang, Shu-Ming; Yang, Hui; Wei, Long Source: Chinese Physics B, v 19, n 5, p 0578021-0578024, 2010 Database: Compendex 228. Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite Zeyu, Ma (Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xiaoliang, Wang; Cuimei, Wang; Hongling, Xiao; Cuibai, Yang Source: Journal of Semiconductors, v 31, n 5, p 0530021-0530024, 2010 Database: Compendex 229. Magnetic properties of FePt nanoparticles prepared by a micellar method Gao, Y. (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083, China); Zhang, X.W.; Yin, Z.G.; Qu, S.; You, J.B.; Chen, N.F. Source: Nanoscale Research Letters, v 5, n 1, p 1-6, January 2010 Database: Compendex 230. Frequency-pushing effect in single-mode diode laser subject to external dual-beam injection Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China); Zhu, Ning Hua; Wang, Li Xian; Ke, Jian Hong; Chen, Shuo Fu; Qi, Xiao Qiong; Zhang, Bang Hong; Xie, Liang Source: IEEE Journal of Quantum Electronics, v 46, n 5, p 796-803, 2010 Database: Compendex 231. Lineshape analysis of the beat signal between optical carrier and delayed sidebands Zhu, Ning Hua (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Man, Jiang Wei; Zhang, Hong Guang; Ke, Jian Hong; Han, Wei; Chen, Wei; Liu, Yu; Wang, Xin; Yuan, Hai Qing; Xie, Liang Source: IEEE Journal of Quantum Electronics, v 46, n 3, p 347-353, 2010 Database: Compendex 232. A snap-shot mode cryogenic readout circuit for QWIPIR FPAs Wenlong, Ma (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yin, Shi; Yaohui, Zhang; Hongbing, Liu; Baojian, Xie Source: Journal of Semiconductors, v 31, n 2, 2010 Database: Compendex 233. Plasmonic back structures designed for efficiency enhancement of thin film solar cells Bai, Wenli (Nano-optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Gan, Qiaoqiang; Song, Guofeng; Bartoli, Filbert Source: Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010, 2010, Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 Database: Compendex 234. Design of an indoor wireless communication system with white LEDs Zhu, Lin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China); Liu, Bo; Yang, Yu; Chen, Xiongbin; Pei, Weihua; Chen, Hongda Source: Gaojishu Tongxin/Chinese High Technology Letters, v 20, n 8, p 863-867, August 2010 Language: Chinese Database: Compendex 235. Generation of compact radially polarized beam at 850 nm in vertical-cavity surface-emitting laser via plasmonic modulation Cai, Likang (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Jing; Bai, Wenli; Wang, Qing; Wei, Xin; Song, Guofeng Source: Applied Physics Letters, v 97, n 20, November 15, 2010 Database: Compendex 236. 40 Gbits/s all-optical clock recovery for degraded signals using an amplified feedback laser Wang, Li (Tsinghua National Laboratory for Information and Science Technology, Department of Electronics Engineering, Tsinghua University, Beijing 100084, China); Zhao, Xiaofan; Lou, Caiyun; Lu, Dan; Sun, Yu; Zhao, Lingjuan; Wang, Wei Source: Applied Optics, v 49, n 34, p 6577-6581, December 1, 2010 Database: Compendex 237. Flat surface plasmon polariton bands in bragg grating waveguide for slow light Zhang, Jing (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Cai, Likang; Bai, Wenli; Song, Guofeng Source: Journal of Lightwave Technology, v 28, n 14, p 2030-2036, 2010 Database: Compendex 238. Mechanisms of high efficiency for 980 nm diode lasers with asymmetric waveguide structure Wang, Jun (National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Bai, Yiming; Liu, Yuanyuan; Chong, Feng; Xiong, Cong; Wang, Cuiluan; Feng, Xiaoming; Zhong, Li; Liu, Suping; Ma, Xiaoyu Source: Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, v 22, n 8, p 1785-1789, August 2010 Language: Chinese Database: Compendex 239. A low power Gm-C filter with on-chip automatic tuning for a WLAN transceiver Liu, Silin (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Ma, Heping; Shi, Yin Source: Journal of Semiconductors, v 31, n 6, 2010 Database: Compendex 240. Twice annealing to fabricate quantum dots of III-V semiconductors Xiao, Hu (School of Physics and Technology, Wuhan University, Wuhan 430072, China); Meng, Xian-Quan; Zhu, Zhen-Hua; Jin, Peng; Liu, Feng-Qi; Wang, Zhan-Guo Source: Rengong Jingti Xuebao/Journal of Synthetic Crystals, v 39, n 3, p 747-750+765, June 2010 Language: Chinese Database: Compendex 241. Design and fabrication of a gate controlled Si LED based on standard CMOS technology Yang, Guang-Hua (Electronic and Information School, Tianjin University, Tianjin 300072, China); Mao, Lu-Hong; Huang, Chun-Hong; Wang, Wei; Guo, Wei-Lian Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 5, p 644-646, May 2010 Language: Chinese Database: Compendex 242. Phase difference measurement method of sine signal with same frequency using aptotic phase shifting Gong, Guoliang (Lab. of Artificial Neural Networks, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China); Lu, Huaxiang Source: Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument, v 31, n 4, p 873-877, April 2010 Language: Chinese Database: Compendex 243. Design of large separating angle ultracompact multiway beam splitter based on photonic crystal ring resonators Guo, Hao (Department of Physics, Nanchang University, Nanchang, Jiangxi 330031, China); Wu, Ping; Yu, Tianbao; Liao, Qinghua; Liu, Nianhua; Huang, Yongzhen Source: Guangxue Xuebao/Acta Optica Sinica, v 30, n 5, p 1501-1505, May 2010 Language: Chinese Database: Compendex 244. Effect of light soaking on CPM absorption spectra in silicon films with mixed amorphous-nanocrystalline structure Kazanskii, Andrey (Department of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, Russia); Kong, Guanglin; Zeng, Xiangbo; Hao, Huiying Source: Physica Status Solidi (C) Current Topics in Solid State Physics, v 7, n 3-4, p 666-669, 2010, Papers Presented at the 23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 23 Database: Compendex 245. Fiber dispersion and nonlinearity influences on transmissions of AM and FM data modulation signals in radio-over-fiber system Qi, Xiaoqiong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Jiaming; Zhang, Xiaoping; Xie, Liang Source: IEEE Journal of Quantum Electronics, v 46, n 8, p 1170-1177, 2010 Database: Compendex 246. Pipeline architecture and parallel computation-based real-time stereovision tracking system for surgical navigation Zhou, Ping (Centre for Research on Optoelectronics Information Technology and Color Engineering, Beijing Institute of Technology, Beijing 100081, China); Liu, Yue; Wang, Yongtian Source: IEEE Transactions on Instrumentation and Measurement, v 59, n 5, p 1240-1250, May 2010 Database: Compendex 247. A FPGA-based virtual instrumentation system for high speed parallel optical transmission BER testing Liu, Bo (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yang, Yu; Chen, Xiongbin; Chen, Hongda Source: Gaojishu Tongxin/Chinese High Technology Letters, v 20, n 9, p 955-959, September 2010 Language: Chinese Database: Compendex 248. Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites Tang, Aiwei (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Qu, Shengchun; Hou, Yanbing; Teng, Feng; Tan, Hairen; Liu, Jie; Zhang, Xingwang; Wang, Yongsheng; Wang, Zhanguo Source: Journal of Applied Physics, v 108, n 9, November 1, 2010 Database: Compendex 249. Diffractive microlens with a cascade focal plane fabricated by single mask UV-photolithography and common KOH:H2O etching Zhang, Xinyu (Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, Hubei Province, China); Li, Hui; Liu, Kan; Luo, Jun; Xie, Changsheng; Ji, An; Zhang, Tianxu Source: Journal of Micromechanics and Microengineering, v 20, n 10, September 29, 2010 Database: Compendex 250. Stable single-mode distributed feedback quantum cascade laser with surface metal grating Zhang, W. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, L.J.; Zhang, J.C.; Zhang, Q.D.; Li, L.; Liu, J.Q.; Liu, F.Q.; Wang, Z.G. Source: Journal of Physics D: Applied Physics, v 43, n 38, September 29, 2010 Database: Compendex 251. Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation Zhou, Huiying (Computer and Information Engineering School, Central South University of Forestry and Technology, Changsha 410004, People's Republic of China); Qu, Shengchun; Jin, Peng; Xu, Bo; Ye, Xiaoling; Liu, Junpeng; Wang, Zhanguo Source: Journal of Crystal Growth, 2010 Article in Press Database: Compendex 252. The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy Song, H.P. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zheng, G.L.; Yang, A.L.; Guo, Y.; Wei, H.Y.; Li, C.M.; Yang, S.Y.; Liu, X.L.; Zhu, Q.S.; Wang, Z.G. Source: Solid State Communications, v 150, n 41-42, p 1991-1994, 2010 Database: Compendex 253. Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells Zhang, Han (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, Nuofu; Wang, Yu; Zhang, Xingwang; Yin, Zhigang; Shi, Huiwei; Wang, Yansuo; Huang, Tianmao; Bai, Yiming; Fu, Zhen Source: Science China Technological Sciences, v 53, n 9, p 2569-2574, September 2010 Database: Compendex 254. Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick Ni suicide / polycrystalline p-Si composite anode Li, Y.Z. (State Key Laboratory for Mesoscoplc Physics, School of Physics, Peking University, Beijing 100871, China); Wang, Z.L.; Luo, H.; Wang, Y.Z.; Xu, W.J.; Ran, G.Z.; Qin, G.G.; Zhao, W.Q.; Liu, H. Source: Optics Express, v 18, n 15, p 15942-15947, July 19, 2010 Database: Compendex 255. Effects of the periodicity of the subwavelength hole arrays and hole shape of a thin gold film on the optical transmission characteristics Li, Hai-Jun (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China); Zhang, Xiao-Dong; Wang, Min-Rui; Lin, Wen-Kui; Shi, Wen-Hua; Zhong, Fei; Zhang, Bao-Shun Source: Optoelectronics Letters, v 6, n 3, p 211-213, 2010 Database: Compendex 256. Study on low-frequency characteristic of double-diaphragm fiber Bragg grating geophone Li, Xue-Cheng (School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China); Liu, Su; Zhang, Wen-Tao; Zhang, Fa-Xiang; Li, Fang; Liu, Yu-Liang Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 4, p 529-532, April 2010 Language: Chinese Database: Compendex 257. Adaptive real-time labeling and recognition of multiple infrared markers using FPGA Zhou, Ping (Department of Optoelectronic Engineering, Beijing Institute of Technology, Beijing 100081, China); Liu, Yue; Wang, Yongtian Source: Proceedings of the 5th International Conference on Image and Graphics, ICIG 2009, p 983-988, 2010, Proceedings of the 5th International Conference on Image and Graphics, ICIG 2009 Database: Compendex 258. Dependence of transport properties in tunnel junction on boron doping Shi, M.J. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zeng, X.B.; Liu, S.Y.; Peng, W.B.; Xiao, H.B.; Liao, X.B.; Wang, Z.G.; Kong, G.L. Source: Physica Status Solidi (C) Current Topics in Solid State Physics, v 7, n 3-4, p 1109-1111, 2010, Papers Presented at the 23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 23 Database: Compendex 259. Collimation and focus characteristics of slow-axis beams of diode laser array Ding, Peng (College of Laser Engineering, Beijing University of Technology, Beijing 100124, China); Cao, Yin-Hua; Qi, Jun-Feng; Wang, Xiao-Wei; Zuo, Tie-Chuan Source: Beijing Gongye Daxue Xuebao / Journal of Beijing University of Technology, v 36, n 3, p 429-432, March 2010 Language: Chinese Database: Compendex 260. Temperature dependence of hole spin relaxation in ultrathin InAs monolayers Li, T. (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Zhang, X.H.; Zhu, Y.G.; Huang, X.; Han, L.F.; Shang, X.J.; Ni, H.Q.; Niu, Z.C. Source: Physica E: Low-Dimensional Systems and Nanostructures, v 42, n 5, p 1597-1600, March 2010 Database: Compendex 261. Compact reconfigurable binary-decision-diagram logic circuit on a GaAs nanowire network Shiratori, Yuta (Research Center for Integrated Quantum Electronics, Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo, 060-8628, Japan); Miura, Kensuke; Jia, Rui; Wu, Nan-Jian; Kasai, Seiya Source: Applied Physics Express, v 3, n 2, February 2010 Database: Compendex 262. Frequency drift and instantaneous linewidth broadening of phase-section tuned SG-DBR laser Ke, Jian Hong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhu, Ning Hua; Xie, Liang; Zhao, Ling Juan; Wang, Li Xian; Chen, Shuo Fu; Liu, Jian Guo; Zhang, Yun; Wang, Wei Source: Optics Communications, 2010 Article in Press Database: Compendex 263. Correcting the systematic error of the density functional theory calculation: The alternate combination approach of genetic algorithm and neural network Wang, Ting-Ting (Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China); Li, Wen-Long; Chen, Zhang-Hui; Miao, Ling Source: Chinese Physics B, v 19, n 7, July 2010 Database: Compendex 264. A frequency selection method of NIR spectroscopy for discrimination of maize seed varieties Chen, Xin-Liang (Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China); Wang, Hui-Rong; Li, Wei-Jun; Lai, Jiang-Liang Source: Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, v 30, n 11, p 2919-2922, November 2010 Language: Chinese Database: Compendex 265. Origin of ferromagnetism in self-assembled Ga1-x Mnx As quantum dots grown on Si Wang, S.L. (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, L.; Meng, K.K.; Xu, P.F.; Meng, H.J.; Lu, J.; Yan, W.S.; Zhao, J.H. Source: Applied Physics Letters, v 97, n 24, December 13, 2010 Database: Compendex 266. Design of a compact polarizing beam splitter based on a photonic crystal ring resonator with a triangular lattice Yu, Tianbao (Department of Physics, Nanchang University, Nanchang 330031, China); Huang, Jiehui; Liu, Nianhua; Yang, Jianyi; Liao, Qinghua; Jiang, Xiaoqing Source: Applied Optics, v 49, n 11, p 2168-2172, April 10, 2010 Database: Compendex 267. Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs Luo, Jing (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zheng, Hou Zhi; Shen, Chao; Zhang, Hao; Zhu, Ke; Zhu, Hui; Liu, Jian; Li, Gui Rong; Ji, Yang; Zhao, Jian Hua Source: Science China: Physics, Mechanics and Astronomy, v 53, n 5, p 779-782, May 2010 Database: Compendex 268. Complex networks constructed from irrational number sequences Chen, Chen (School of Mathematics and Statistics, Wuhan University, Hubei 430072, China); Lu, Jun-an; Wu, Xiaoqun Source: Physica A: Statistical Mechanics and its Applications, v 389, n 13, p 2654-2662, July 1, 2010 Database: Compendex 269. First-principles study of ground-state properties and high pressure behavior of ThO2 Wang, Bao-Tian (Institute of Theoretical Physics, Department of Physics, Shanxi University, Taiyuan, 030006, China); Shi, Hongliang; Li, Wei-Dong; Zhang, Ping Source: Journal of Nuclear Materials, v 399, n 2-3, p 181-188, April 30, 2010 Database: Compendex 270. Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy Zhao, Jie (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Zeng, Yiping; Liu, Chao; Li, Yanbo Source: Journal of Crystal Growth, v 312, n 9, p 1491-1495, April 15, 2010 Database: Compendex 271. Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals Peng, Yinsheng (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Ye, Xiaoling; Xu, Bo; Jin, Peng; Niu, Jiebin; Jia, Rui; Wang, Zhanguo Source: Journal of Semiconductors, v 31, n 1, 2010 Database: Compendex 272. Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices Wang, Liang-Ji (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Shu-Ming; Zhu, Ji-Hong; Zhu, Jian-Jun; Zhao, De-Gang; Liu, Zong-Shun; Jiang, De-Sheng; Wang, Yu-Tian; Yang, Hui Source: Chinese Physics B, v 19, n 1, 2010 Database: Compendex 273. Adsorption/desorption and electrically controlled flipping of ammonia molecules on graphene Chen, Shanshan (Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China); Cai, Weiwei; Chen, David; Ren, Yujie; Li, Xuesong; Zhu, Yanwu; Kang, Junyong; Ruoff, Rodney S. Source: New Journal of Physics, v 12, December 2010 Database: Compendex 274. Valence band offset of ZnO/BaTiO3 heterojunction measured byX-ray photoelectron spectroscopy Jia, C.H. (Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing, 100083, China); Chen, Y.H.; Zhou, X.L.; Yang, A.L.; Zheng, G.L.; Liu, X.L.; Yang, S.Y.; Wang, Z.G. Source: Applied Physics A: Materials Science and Processing, p 1-4, 2010 Article in Press Database: Compendex 275. A rigorous comparative analysis of general and restricted interference couplers Yao, Chen (Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Bejing University of Posts and Telecommunications, Beijing, 100876, China); Cheng, Yuanbing; Wu, Jian; Hong, Xiaobin; Xu, Kun; Zhao, Lingjuan; Li, Wei; Zuo, Yong; Guo, Hongxiang; Li, Yan; Wang, Wei; Lin, Jintong Source: Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010, p 398-399, 2010, Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010 Database: Compendex 276. Origins of magnetism in transition metal doped CuI Wang, Jing (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Jingbo; Li, Shu-Shen Source: Journal of Applied Physics, v 108, n 4, August 15, 2010 Database: Compendex 277. Photovoltaic effects of InGaN/GaN double heterojunctions with p-GaN nanorod arrays Zhang, Dong-Yan (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, Suzhou 215125, China); Zheng, Xin-He; Tang, Long-Juan; Dong, Jian-Rong; Wang, Hui; Yang, Hui Source: IEEE Electron Device Letters, v 31, n 12, p 1422-1424, December 2010 Database: Compendex 278. Room-temperature ferromagnetism in Co-doped In2O3 nanocrystals Meng, Xiuqing (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Tang, Liming; Li, Jingbo Source: Journal of Physical Chemistry C, v 114, n 41, p 17569-17573, October 21, 2010 Database: Compendex 279. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier Yang, Liu (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Nan, Ye; Baojun, Wang; Daibing, Zhou; Xin, An; Jing, Bian; Jiaoqing, Pan; Lingjuan, Zhao; Wei, Wang Source: Journal of Semiconductors, v 31, n 7, July 2010 Database: Compendex 280. Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells Tan, Furui (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, PR China); Qu, Shengchun; Wu, Ju; Wang, Zhijie; Jin, Lan; Bi, Yu; Cao, Jie; Liu, Kong; Zhang, Junmeng; Wang, Zhanguo Source: Solar Energy Materials and Solar Cells, 2010 Article in Press Database: Compendex 281. Note: A time-resolved Kerr rotation system with a rotatable in-plane magnetic field Qian, Xuan (SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Gu, Xiaofang; Ji, Yang Source: Review of Scientific Instruments, v 81, n 10, October 2010 Database: Compendex 282. Measurement of w-InN/h-BN heterojunction band offsets by X-Ray photoemission spectroscopy Liu, J.M. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083 Beijing, China); Liu, X.L.; Xu, X.Q.; Wang, J.; Li, C.M.; Wei, H.Y.; Yang, S.Y.; Zhu, Q.S.; Fan, Y.M.; Zhang, X.W.; Wang, Z.G. Source: Nanoscale Research Letters, v 5, n 8, p 1340-1343, 2010 Database: Compendex 283. Research on phase consistency of fiber laser sensor array system based on phase generated carrier demodulation Wang, Yan (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); He, Jun; Li, Fang; Liu, Yuliang Source: Zhongguo Jiguang/Chinese Journal of Lasers, v 37, n 6, p 1542-1546, June 2010 Language: Chinese Database: Compendex 284. Analysis of leakage current in GaAs micro-solar cell arrays Wang, Yan Shuo (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Chen, Nuo Fu; Zhang, Xing Wang; Bai, Yi Ming; Wang, Yu; Huang, Tian Mao; Zhang, Han; Shi, Hui Wei Source: Science China Technological Sciences, v 53, n 5, p 1240-1246, May 2010 Database: Compendex 285. Characterization for phase transition of nano VO2 thin film by infrared transmission Liang, Ji-Ran (School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China); Hu, Ming; Kan, Qiang; Wang, Xiao-Dong; Li, Gui-Ke; Li, Chang-Qing; Chen, Hong-Da Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 3, p 323-327, March 2010 Language: Chinese Database: Compendex 286. Small-signal equivalent-circuit model and characterization of 1.55-¦Ìm buried tunnel junction vertical-cavity surface-emitting lasers Zhu, Ning Hua (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing 100083, China); Xu, Gui Zhi; Hofmann, Werner; Chen, Wei; Bohm, Gerhard; Liu, Yu; Wang, Xin; Xie, Liang; Amann, Markus-Christian Source: IEEE Transactions on Microwave Theory and Techniques, v 58, n 5 PART 1, p 1283-1289, May 2010 Database: Compendex 287. Thermal induced facet destructive feature of quantum cascade lasers Zhang, Quande (Key Lab. of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Liu, Feng-Qi; Zhang, Wei; Lu, Quanyong; Wang, Lijun; Li, Lu; Wang, Zhanguo Source: Applied Physics Letters, v 96, n 14, 2010 Database: Compendex 288. An algorithm for biomimetic image enhancement based on human visual property Jin, Xiaoxian (Laboratory of Artificial Neural Networks, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Weijun; Chen, Xu; Wang, Shoujue Source: Jisuanji Fuzhu Sheji Yu Tuxingxue Xuebao/Journal of Computer-Aided Design and Computer Graphics, v 22, n 3, p 534-537+544, March 2010 Language: Chinese Database: Compendex 289. The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy Huang, X. (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Zhang, X.H.; Zhu, Y.G.; Li, T.; Han, L.F.; Shang, X.J.; Ni, H.Q.; Niu, Z.C. Source: Optics Communications, v 283, n 7, p 1510-1513, April 1, 2010 Database: Compendex 290. First-principles study of UC2 and U2C3 Shi, Hongliang (LCP, Institute of Applied Physics and Computational Mathematics, P.O. Box 8009, Beijing, 100088, China); Zhang, Ping; Li, Shu-Shen; Wang, Baotian; Sun, Bo Source: Journal of Nuclear Materials, v 396, n 2-3, p 218-222, January 31, 2010 Database: Compendex 291. InN layers grown by MOCVD on SrTiO3 substrates Jia, C.H. (Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing, 100083, China); Chen, Y.H.; Zhou, X.L.; Liu, G.H.; Guo, Y.; Liu, X.L.; Yang, S.Y.; Wang, Z.G. Source: Journal of Crystal Growth, v 312, n 3, p 373-377, January 15, 2010 Database: Compendex 292. Automatic irrigation system based on wireless network Yang, Genghuang (Tianjin Key Laboratory of Information Sensing and Intelligent Control, Tianjin University of Technology and Education, Tianjin, 300222, China); Liu, Yuliang; Zhao, Li; Cui, Shigang; Meng, Qingguo; Chen, Hongda Source: 2010 8th IEEE International Conference on Control and Automation, ICCA 2010, p 2120-2125, 2010, 2010 8th IEEE International Conference on Control and Automation, ICCA 2010 Database: Compendex 293. Resonant subband Landau level coupling in symmetric quantum well Tung, L.-C. (National High Magnetic Field Laboratory, Tallahassee, FL 32310, United States); Wu, X.-G.; Pfeiffer, L.N.; West, K.W.; Wang, Y.-J. Source: Journal of Applied Physics, v 108, n 8, October 15, 2010 Database: Compendex 294. Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices Ran, G.Z. (State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China); Jiang, D.F.; Kan, Q.; Chen, H.D. Source: Applied Physics Letters, v 97, n 23, December 6, 2010 Database: Compendex 295. Feature analysis and discrimination of varieties of corn based on near infrared spectra Wang, Hui-Rong (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chen, Xin-Liang; Li, Wei-Jun; Lai, Jiang-Liang Source: Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, v 30, n 12, p 3213-3216, December 2010 Language: Chinese Database: Compendex 296. Effects of growth temperature on the optical properties of InN nanostructures grown by MOCVD Sun, Yuanping (Institute of Science and Technology for Opto-Electronic Information, Yantai University, Yantai 264005, China); Cho, Yong-Hoon; Wang, Hui; Wang, Lili; Zhang, Shuming; Yang, Hui Source: Physica Status Solidi (C) Current Topics in Solid State Physics, v 7, n 7-8, p 2029-2032, 2010, Papers Presented at the 8th International Conference on Nitride Semiconductors, ICNS-8 Database: Compendex 297. Domain wall resistance in perpendicular (Ga,Mn)As: Dependence on pinning Wang, K.Y. (SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Edmonds, K.W.; Irvine, A.C.; Wunderlich, J.; Olejnik, K.; Rushforth, A.W.; Campion, R.P.; Williams, D.A.; Foxon, C.T.; Gallagher, B.L. Source: Journal of Magnetism and Magnetic Materials, v 322, n 21, p 3481-3484, 2010 Database: Compendex 298. 5Gb/s optical logic AND operations using by monolithically integrated photodiode and electroabsorption modulator Zhang, Y.X. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, Beijing 100083, China); Zhao, L.J.; Niu, B.; Pan, J.Q.; Wang, W. Source: Proceedings of SPIE - The International Society for Optical Engineering, v 7717, 2010, Optical Modelling and Design Database: Compendex 299. Study of enhanced transmission through nanoaperture laser with a metal particle Gao, Jian-Xia (School of Information, Hebei Polytechnic University, Tangshan 063009, China); Song, Guo-Feng Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 6, p 848-850, June 2010 Language: Chinese Database: Compendex 300. Effect of growth temperature on the structural and optical properties of ZnO films grown by MOCVD Wang, Zhen-Hua (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yang, An-Li; Liu, Xiang-Lin; Wei, Hong-Yuan; Jiao, Chun-Mei; Zhu, Qin-Sheng; Yang, Shao-Yan; Wang, Zhan-Guo Source: Rengong Jingti Xuebao/Journal of Synthetic Crystals, v 39, n 1, p 34-38+43, February 2010 Database: Compendex 301. Self-heating effect in 1.3 ¦Ìm p -doped InAs/GaAs quantum dot vertical cavity surface emitting lasers Xu, D.W. (School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore); Tong, C.Z.; Yoon, S.F.; Zhao, L.J.; Ding, Y.; Fan, W.J. Source: Journal of Applied Physics, v 107, n 6, 2010 Database: Compendex 302. Spin-transfer-torque-assisted domain-wall creep in a Co/Pt multilayer wire San Emeterio Alvarez, L. (School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, United Kingdom); Wang, K.-Y.; Lepadatu, S.; Landi, S.; Bending, S.J.; Marrows, C.H. Source: Physical Review Letters, v 104, n 13, April 2, 2010 Database: Compendex 303. Optical spectral relation between the master and the frequency-locked slave lasers Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Zhu, Ning Hua; Wang, Li Xian; Ke, Jian Hong; Chen, Shuo Fu; Zhang, Bang Hong; Xie, Liang Source: Optics Communications, v 283, n 11, p 2324-2327, June 1, 2010 Database: Compendex 304. High contrast ratio, high uniformity multiple quantum well spatial light modulators Yuyang, Huang (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, C.; Wasilewski, Z.R.; Buchanan, M.; Laframboise, S.R.; Chen, Yang; Guoxin, Cui; Lifeng, Bian; Hui, Yang; Yaohui, Zhang Source: Journal of Semiconductors, v 31, n 3, 2010 Database: Compendex 305. Optically controlled quantum dot gated transistors with high on/off ratio Yang, Xiaohong (Hitachi Cambridge Laboratory, Cavendish Laboratory, J. J. Thompson Avenue, Cambridge CB3 0HE, United Kingdom); Xu, Xiulai; Wang, Xiuping; Ni, Haiqiao; Han, Qin; Niu, Zhichuan; Williams, David A. Source: Applied Physics Letters, v 96, n 8, 2010 Database: Compendex 306. Frequency and temporal coherence properties of distributed bragg reflector laser Ke, Jian Hong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China); Zhu, Ning Hua; Zhang, Hong Guang; Man, Jiang Wei; Zhao, Ling Juan; Chen, Wei; Wang, Xin; Liu, Yu; Yuan, Hai Qing; Xie, Liang; Wang, Wei Source: Microwave and Optical Technology Letters, v 52, n 4, p 822-825, April 2010 Database: Compendex 307. Hole concentration test of p-type GaN by analyzing the spectral response of p-n+ structure GaN ultraviolet photodetector Zhao, D.G. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Jiang, D.S.; Zhu, J.J.; Wang, H.; Liu, Z.S.; Zhang, S.M.; Yang, Hui Source: Journal of Alloys and Compounds, v 492, n 1-2, p 300-302, March 4, 2010 Database: Compendex 308. An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells Zhao, D.G. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Jiang, D.S.; Zhu, J.J.; Wang, H.; Liu, Z.S.; Zhang, S.M.; Wang, Y.T.; Jia, Q.J.; Yang, Hui Source: Journal of Alloys and Compounds, v 489, n 2, p 461-464, January 21, 2010 Database: Compendex 309. Compact four-channel reconfigurable optical add-drop multiplexer using silicon photonic wire [Opt. Commun. 282 (2009) 3477] (DOI:10.1016/j.optcom.2009.06.009) Geng, Minming (Optoelectronic Systems Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Jia, Lianxi; Zhang, Lei; Yang, Lin; Chen, Ping; Liu, Yuliang Source: Optics Communications, v 283, n 3, p 515, February 1, 2010 Database: Compendex 310. Density gradient ultracentrifugation of nanotubes: Interplay of bundling and surfactants encapsulation Bonaccorso, F. (Engineering Department, Cambridge University, Cambridge CB3 0FA, United Kingdom); Hasan, T.; Tan, P.H.; Sciascia, C.; Privitera, G.; Di Marco, G.; Gucciardi, P.G.; Ferrari, A.C. Source: Journal of Physical Chemistry C, v 114, n 41, p 17267-17285, October 21, 2010 Database: Compendex 311. Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-¦Ìc-Si solar cell Qingwen, Deng (Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xiaoliang, Wang; Hongling, Xiao; Zeyu, Ma; Xiaobin, Zhang; Qifeng, Hou; Jinmin, Li; Zhanguo, Wang Source: Journal of Semiconductors, v 31, n 10, October 2010 Database: Compendex 312. Research of slow light in the two-dimensional rods photonic crystal coupled-cavity waveguides Qu, Lianjie (State Key Laboratory on Integrated Optoeletronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yang, Yuede; Huang, Yongzhen Source: Zhongguo Jiguang/Chinese Journal of Lasers, v 37, n SUPPL. 1, p 186-190, November 2010 Language: Chinese Database: Compendex 313. Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes Xiaoli, Ji (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Fuhua, Yang; Junxi, Wang; Ruifei, Duan; Kai, Ding; Yiping, Zeng; Guohong, Wang; Jinmin, Li Source: Journal of Semiconductors, v 31, n 9, September 2010 Database: Compendex 314. Photoluminescence of Mn+ doped GaAs Zhou, Huiying (Computer and Information Engineering School, Central South University of Forestry and Technology, Changsha 410004, China); Qu, Shengchun; Liao, Shuzhi; Zhang, Fasheng; Liu, Junpeng; Wang, Zhanguo Source: Proceedings of SPIE - The International Society for Optical Engineering, v 7658, 2010, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology Database: Compendex 315. Improved peak power method for measuring frequency responses of photodetectors in a selfheterodyne system Wang, Li Xian (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China); Zhu, Ning Hua; Ke, Jian Hong; Li, Wei; Chen, Shuo Fu; Xie, Liang Source: Microwave and Optical Technology Letters, v 52, n 10, p 2199-2203, October 2010 Database: Compendex 316. Enhancement of quality factor for TE whispering-gallery modes in microcylinder resonators Yang, Yue-De (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Huang, Yong-Zhen; Guo, Wei-Hua; Lu, Qiaoyin; Donegan, John F. Source: Optics Express, v 18, n 12, p 13057-13062, June 7, 2010 Database: Compendex 317. Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy Xu, Xiaoqing (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Liu, Xianglin; Guo, Yan; Wang, Jun; Song, Huaping; Yang, Shaoyan; Wei, Hongyuan; Zhu, Qinsheng; Wang, Zhanguo Source: Journal of Applied Physics, v 107, n 10, May 15, 2010 Database: Compendex 318. Design of surface emitting distributed feedback quantum cascade laser with single-lobe far-field pattern and high outcoupling efficiency Guo, Wan-Hong (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Jun-Qi; Lu, Quan-Yong; Zhang, Wei; Li, Lu; Wang, Li-Jun; Liu, Feng-Qi; Wang, Zhan-Guo Source: Chinese Physics B, v 19, n 5, p 542081-0542087, 2010 Database: Compendex 319. Study on broadband emitting self-assembled quantum-dot material and devices Jin, P. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Lv, X.Q.; Liu, N.; Zhang, Z.Y.; Wang, Z.G. Source: INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, p 304-305, 2010, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings Database: Compendex 320. Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress Ding, F. (Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany); Singh, R.; Plumhof, J.D.; Zander, T.; Kr¨¢pek, V.; Chen, Y.H.; Benyoucef, M.; Zwiller, V.; D?rr, K.; Bester, G.; Rastelli, A.; Schmidt, O.G. Source: Physical Review Letters, v 104, n 6, February 12, 2010 Database: Compendex 321. Modification of two-photon excited fluorescence from quantum dots on SiN photonic crystals Xu, Xingsheng (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yamada, Toshiki; Yokoyama, Shiyoshi Source: Optics Letters, v 35, n 3, p 309-311, February 1, 2010 Database: Compendex 322. Study of GaN epilayers growth on freestanding Si cantilevers Chen, Jing (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China); Wang, Xi; Wu, Aimin; Zhang, Bo; Wang, Xi; Wu, Yuxin; Zhu, Jianjun; Yang, Hui Source: Solid-State Electronics, v 54, n 1, p 4-7, January 2010 Database: Compendex 323. A novel detail-preserving algorithm for removing salt-and-pepper noise Xiao, Quan (School of Information Science and Technology, Xiamen University, Fujian Xiamen 361005, China); Ding, Xing-Hao; Wang, Shou-Jue; Liao, Ying-Hao; Guo, Dong-Hui Source: Tien Tzu Hsueh Pao/Acta Electronica Sinica, v 38, n 10, p 2273-2278, October 2010 Language: Chinese Database: Compendex 324. Self-consistent analysis of AlSb/InAs high electron mobility transistor structures Li, Yanbo (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Yang; Zeng, Yiping Source: Journal of Applied Physics, v 108, n 4, August 15, 2010 Database: Compendex 325. Effects of the electrical signals generated in passive sections of SG-DBR lasers Ke, Jian Hong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhu, Ning Hua; Xie, Liang; Zhao, Ling Juan; Man, Jiang Wei; Sun, Ke; Wang, Li Xian; Chen, Shuo Fu; Liu, Jian Guo; Zhang, Yun; Wang, Wei Source: Optics Communications, v 283, n 24, p 5156-5160, 2010 Database: Compendex 326. Fabrication of MMI splitters by photosensitive hybrid sol-gel technology Wu, Yuan-Da (Research and Development Center for Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); An, Jun-Ming; Wang, Yue; Yin, Xiao-Jie; Zhang, Jia-Shun; Li, Jian-Guang; Wang, Hong-Jie; Hu, Xiong-Wei Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 10, p 1452-1454, October 2010 Language: Chinese Database: Compendex 327. Fabrication of Ge PIN photodiodes on silicon-on-insulator substrates under normal incidence Zhou, Zhi-Wen (Shenzhen Institute of Information Technology, Shenzhen Institute of Information and Technology, Shenzhen 518029, China); He, Jing-Kai; Wang, Rui-Chun; Li, Cheng; Yu, Jin-Zhong Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 11, p 1609-1613, November 2010 Language: Chinese Database: Compendex 328. A dual-band frequency synthesizer for CMMB application with low phase noise Peng, Yu (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Jun, Yan; Yin, Shi; Foster, Dai Fa Source: Journal of Semiconductors, v 31, n 9, September 2010 Database: Compendex 329. Stretchable graphene: A close look at fundamental parameters through biaxial straining Ding, Fei (Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany); Ji, Hengxing; Chen, Yonghai; Herklotz, Andreas; D?rr, Kathrin; Mei, Yongfeng; Rastelli, Armando; Schmidt, Oliver G. Source: Nano Letters, v 10, n 9, p 3453-3458, September 8, 2010 Database: Compendex 330. All-optical clock recovery for 20 Gb/s using an amplified feedback DFB laser Sun, Yu (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Academy of Science, Beijing 100083, China); Pan, Jiao Qing; Zhao, Ling Juan; Chen, Weixi; Wang, Wei; Wang, Li; Zhao, Xiao Fan; Lou, Cai Yun Source: Journal of Lightwave Technology, v 28, n 17, p 2521-2525, 2010 Database: Compendex 331. Optimization of VI/II pressure ratio in ZnTe growth on GaAs(0 0 1) by molecular beam epitaxy Zhao, Jie (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, QingHua East Road, Beijing 100083, China); Zeng, Yiping; Liu, Chao; Cui, Lijie; Li, Yanbo Source: Applied Surface Science, v 256, n 22, p 6881-6886, 2010 Database: Compendex 332. Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model Wang, Y. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China); Chen, N.F.; Zhang, X.W.; Huang, T.M.; Yin, Z.G.; Wang, Y.S.; Zhang, H. Source: Solar Energy Materials and Solar Cells, v 94, n 10, p 1704-1710, 2010 Database: Compendex 333. Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy Zhao, C.W. (College of Science, Inner Mongolia University of Technology, Hohhot, 010051, China); Xing, Y.M.; Yu, J.Z.; Han, G.Q. Source: Physica B: Condensed Matter, v 405, n 16, p 3433-3435, 2010 Database: Compendex 334. Mechanism on effect of surface plasmons coupling with InGaN/GaN quantum wells: Enhancement and suppression of photoluminescence intensity Huang, Zengli (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China); Wang, Jianfeng; Liu, Zhenghui; Xu, Ke; Yang, Hui; Cao, Bing; Han, Qin; Zhang, Guiju; Wang, Chinhua Source: Applied Physics Express, v 3, n 7, July 2010 Database: Compendex 335. Dynamics of photo-enhanced magneto-crystalline anisotropy in diluted ferromagnetic GaMnAs Luo, J. (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zheng, H.Z.; Shen, C.; Zhang, H.; Zhu, K.; Zhu, H.; Liu, J.; Li, G.R.; Ji, Y.; Zhao, J.H. Source: Solid State Communications, v 150, n 29-30, p 1419-1421, August 2010 Database: Compendex 336. A high efficiency charge pump circuit for low power applications Peng, Feng (State Key Laboratory for Super Lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yunlong, Li; Nanjian, Wu Source: Journal of Semiconductors, v 31, n 1, 2010 Database: Compendex 337. Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition Zheng, Gaolin (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Yang, Anli; Wei, Hongyuan; Liu, Xianglin; Song, Huaping; Guo, Yan; Jia, Caihong; Jiao, Chunmei; Yang, Shaoyan; Zhu, Qinsheng; Wang, Zhanguo Source: Applied Surface Science, v 256, n 8, p 2606-2610, February 1, 2010 Database: Compendex 338. Photovoltaic effect of tin disulfide with nanocrystalline/amorphous blended phases Tan, Furui (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Qu, Shengchun; Zeng, Xiangbo; Zhang, Changsha; Shi, Mingji; Wang, Zhijie; Jin, Lan; Bi, Yu; Cao, Jie; Wang, Zhanguo; Hou, Yanbing; Teng, Feng; Feng, Zhihui Source: Solid State Communications, v 150, n 1-2, p 58-61, January 2010 Database: Compendex